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Low-temperature sintered ternary system relaxor ferroelectric ceramic material, preparation method and application of low-temperature sintered ternary system relaxor ferroelectric ceramic material
The invention relates to a low-temperature sintered ternary system relaxor ferroelectric ceramic material, a preparation method and application of the low-temperature sintered ternary system relaxor ferroelectric ceramic material. The problems that existing PIN-PMN-PT ceramic sintering temperature is high, environmental pollution is caused by severe lead volatilization, the material performance is reduced, and the production cost is high are solved. The chemical general formula of the ceramic material is xPb(In1/2Nb1/2)O3-(1-x-y)Pb(Mg1/3Nb2/3)O3-yPbTiO3-awt.%CuO. The method includes the steps of firstly, conducting a solid-phase reaction to synthesize a precursor of MgNb2O6; secondly, conducting a solid-phase reaction to synthesize a precursor of InNbO4; thirdly, conducting a solid-phase reaction to synthesize matrix powder of PIN-PMN-PT; fourthly, preparing low-temperature sintered ternary system relaxor ferroelectric ceramic through the combination of the solid-phase synthesis technology and the curtain coating lamination process. The low-temperature sintered ternary system relaxor ferroelectric ceramic material, the preparation method and the application are used for preparing high-power piezoelectric buzzers and multi-layer piezoelectric devices.
Low-temperature sintered ternary system relaxor ferroelectric ceramic material, preparation method and application of low-temperature sintered ternary system relaxor ferroelectric ceramic material
The invention relates to a low-temperature sintered ternary system relaxor ferroelectric ceramic material, a preparation method and application of the low-temperature sintered ternary system relaxor ferroelectric ceramic material. The problems that existing PIN-PMN-PT ceramic sintering temperature is high, environmental pollution is caused by severe lead volatilization, the material performance is reduced, and the production cost is high are solved. The chemical general formula of the ceramic material is xPb(In1/2Nb1/2)O3-(1-x-y)Pb(Mg1/3Nb2/3)O3-yPbTiO3-awt.%CuO. The method includes the steps of firstly, conducting a solid-phase reaction to synthesize a precursor of MgNb2O6; secondly, conducting a solid-phase reaction to synthesize a precursor of InNbO4; thirdly, conducting a solid-phase reaction to synthesize matrix powder of PIN-PMN-PT; fourthly, preparing low-temperature sintered ternary system relaxor ferroelectric ceramic through the combination of the solid-phase synthesis technology and the curtain coating lamination process. The low-temperature sintered ternary system relaxor ferroelectric ceramic material, the preparation method and the application are used for preparing high-power piezoelectric buzzers and multi-layer piezoelectric devices.
Low-temperature sintered ternary system relaxor ferroelectric ceramic material, preparation method and application of low-temperature sintered ternary system relaxor ferroelectric ceramic material
CHANG YUNFEI (Autor:in) / WU JIE (Autor:in) / SUN YUAN (Autor:in) / YANG BIN (Autor:in) / CAO WENWU (Autor:in)
25.11.2015
Patent
Elektronische Ressource
Englisch
IPC:
C04B
Kalk
,
LIME
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