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Method for preparing silicon nitride powder through atomization reaction process
The invention discloses a method for preparing a silicon nitride powder through an atomization reaction process. The method comprises the following steps: atomizing tetrachlorosilane through a pressure atomization manner, wherein the atomization gas employs an inert gas; reacting atomized tetrachlorosilane with liquid ammonia at the interface, controlling the temperature in a tower during reaction to -33.5 DEG C or below, and controlling the feed amount of tetrachlorosilane during reaction; keeping warm of a collected powder product at 400-600 DEG C, and removing ammonium chloride in the product; and keeping warm of purified imino silicon at 950-1100 DEG C to decompose imino silicon to generate amorphous silicon nitride, and then keeping warm at 1400-1600 DEG C to perform crystallization processing on amorphous silicon nitride. The method helps to prepare high-quality silicon nitride.
Method for preparing silicon nitride powder through atomization reaction process
The invention discloses a method for preparing a silicon nitride powder through an atomization reaction process. The method comprises the following steps: atomizing tetrachlorosilane through a pressure atomization manner, wherein the atomization gas employs an inert gas; reacting atomized tetrachlorosilane with liquid ammonia at the interface, controlling the temperature in a tower during reaction to -33.5 DEG C or below, and controlling the feed amount of tetrachlorosilane during reaction; keeping warm of a collected powder product at 400-600 DEG C, and removing ammonium chloride in the product; and keeping warm of purified imino silicon at 950-1100 DEG C to decompose imino silicon to generate amorphous silicon nitride, and then keeping warm at 1400-1600 DEG C to perform crystallization processing on amorphous silicon nitride. The method helps to prepare high-quality silicon nitride.
Method for preparing silicon nitride powder through atomization reaction process
SONG XIBIN (Autor:in) / ZHANG BING (Autor:in) / ZHANG XI (Autor:in) / PAN GUANGJUN (Autor:in)
09.12.2015
Patent
Elektronische Ressource
Englisch
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