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Lead-based (001) C texture piezoelectric ceramic material with high Tr-t and high Tc, and preparation method thereof
The invention provides a lead-based (001) C texture piezoelectric ceramic material with high Tr-t and high Tc, and a preparation method thereof, wherein a (1-x-y)Pb(In1/2Nb1/2)O3-xPb(Sc1/2Nb1/2)O3-yPbTiO3 (PIN-PSN-PT) system is used as texture ceramic powder, x and y represent mole fractions, x is greater than or equal to 0.405 and less than or equal to 0.445, and y is greater than or equal to 0.365 and less than or equal to 0.405. According to the invention, texturing is carried out on a (001)C BT template, wherein the main principle is that PIN-PSN-PT ceramic powder directionally grows on ahorizontal (001)C BT template to obtain an anisotropic structure similar to a single crystal so as to obtain the piezoelectric property close to the single crystal, and a 4R engineering domain is polarized in a non-spontaneous polarization direction on the basis, so that the textured ceramic with high Tr-t, high Tc and high piezoelectric property is obtained.
本发明提供的一种高Tr‑t和Tc的铅基<001>C织构压电陶瓷材料及其制备方法，利用(1‑x‑y)Pb(InNb)O‑xPb(ScNb)O‑yPbTiO(PIN‑PSN‑PT)体系作为织构陶瓷粉体，x、y均表示摩尔分数，0.405≤x≤0.445，0.365≤y≤0.405；在<001>BT模板上进行织构，其主要原理是PIN‑PSN‑PT陶瓷粉体在水平<001>BT模板上进行定向生长，获得与单晶类似的各向异性的结构，从而获得接近单晶的压电性能，在此基础上结合4R工程畴在非自发极化方向上极化，最终获得高T和T及较高压电性能的织构陶瓷。
Lead-based (001) C texture piezoelectric ceramic material with high Tr-t and high Tc, and preparation method thereof
The invention provides a lead-based (001) C texture piezoelectric ceramic material with high Tr-t and high Tc, and a preparation method thereof, wherein a (1-x-y)Pb(In1/2Nb1/2)O3-xPb(Sc1/2Nb1/2)O3-yPbTiO3 (PIN-PSN-PT) system is used as texture ceramic powder, x and y represent mole fractions, x is greater than or equal to 0.405 and less than or equal to 0.445, and y is greater than or equal to 0.365 and less than or equal to 0.405. According to the invention, texturing is carried out on a (001)C BT template, wherein the main principle is that PIN-PSN-PT ceramic powder directionally grows on ahorizontal (001)C BT template to obtain an anisotropic structure similar to a single crystal so as to obtain the piezoelectric property close to the single crystal, and a 4R engineering domain is polarized in a non-spontaneous polarization direction on the basis, so that the textured ceramic with high Tr-t, high Tc and high piezoelectric property is obtained.
本发明提供的一种高Tr‑t和Tc的铅基<001>C织构压电陶瓷材料及其制备方法，利用(1‑x‑y)Pb(InNb)O‑xPb(ScNb)O‑yPbTiO(PIN‑PSN‑PT)体系作为织构陶瓷粉体，x、y均表示摩尔分数，0.405≤x≤0.445，0.365≤y≤0.405；在<001>BT模板上进行织构，其主要原理是PIN‑PSN‑PT陶瓷粉体在水平<001>BT模板上进行定向生长，获得与单晶类似的各向异性的结构，从而获得接近单晶的压电性能，在此基础上结合4R工程畴在非自发极化方向上极化，最终获得高T和T及较高压电性能的织构陶瓷。
Lead-based (001) C texture piezoelectric ceramic material with high Tr-t and high Tc, and preparation method thereof
一种高T和T的铅基<001>织构压电陶瓷材料及其制备方法
YANG SHUAI (Autor:in) / LI FEI (Autor:in) / LI JINGLEI (Autor:in) / ZHOU WENLONG (Autor:in) / WANG LINGHANG (Autor:in) / LIU JINFENG (Autor:in) / XU ZHUO (Autor:in)
10.04.2020
Patent
Elektronische Ressource
Chinesisch
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