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Porous SnO2 hydrogen-sensitive film and preparation and application thereof
The invention discloses a porous SnO2 hydrogen-sensitive film and preparation and application thereof. SnCl4. 2H2O is dissolved in absolute ethyl alcohol and uniformly stirred at the temperature of 60-70 DEG C to obtain a precursor solution of tin; then adding polystyrene (PS) microsphere monodispersion liquid, and uniformly stirring at room temperature to obtain tin precursor liquid of polystyrene (PS) microsphere suspension liquid; sequentially placing a silicon substrate with the interdigital platinum electrode in acetone, absolute ethyl alcohol and deionized water to be subjected to ultrasonic cleaning, and then placing the silicon substrate placed in a drying oven to be dried for use; uniformly spin-coating the dried silicon substrate with the tin precursor solution of the polystyrene(PS) microsphere suspension liquid, and then carrying out surface drying; and finally, heating to 500 DEG C at a heating rate of 1-3 DEG C/min, calcining for 2-3 hours, and cooling to obtain the product. The gas sensitivity of the porous SnO2 hydrogen-sensitive film prepared by the method is superior to that of a SnO2 film, the sensitivity of a sensor is remarkably improved, the sensitivity is improved to 30.4 from original 8 and the improvement multiple is about 4 times.
本发明公开了一种多孔SnO氢敏薄膜及其制备与应用,将SnCl·2HO溶于无水乙醇中,于60~70℃下搅拌均匀得到锡的前驱液;然后加入聚苯乙烯(PS)微球单分散液,在室温下搅拌均匀得到聚苯乙烯(PS)微球悬浮液的锡前驱液;将具有叉指铂电极的硅基片先后置于丙酮、无水乙醇和去离子水中分别用超声波清洗,然后置于烘箱烘干备用;将所得聚苯乙烯(PS)微球悬浮液的锡前驱液均匀旋涂在上述烘干的硅基片上,随后进行表面烘干;最后以1~3℃/min的升温速率加热至500℃煅烧2~3h,冷却后即得。本发明制备的多孔SnO氢敏薄膜气敏性能优于SnO薄膜,显著提高了传感器的灵敏度,灵敏度由原来的8提升至30.4,提升倍数约为4倍。
Porous SnO2 hydrogen-sensitive film and preparation and application thereof
The invention discloses a porous SnO2 hydrogen-sensitive film and preparation and application thereof. SnCl4. 2H2O is dissolved in absolute ethyl alcohol and uniformly stirred at the temperature of 60-70 DEG C to obtain a precursor solution of tin; then adding polystyrene (PS) microsphere monodispersion liquid, and uniformly stirring at room temperature to obtain tin precursor liquid of polystyrene (PS) microsphere suspension liquid; sequentially placing a silicon substrate with the interdigital platinum electrode in acetone, absolute ethyl alcohol and deionized water to be subjected to ultrasonic cleaning, and then placing the silicon substrate placed in a drying oven to be dried for use; uniformly spin-coating the dried silicon substrate with the tin precursor solution of the polystyrene(PS) microsphere suspension liquid, and then carrying out surface drying; and finally, heating to 500 DEG C at a heating rate of 1-3 DEG C/min, calcining for 2-3 hours, and cooling to obtain the product. The gas sensitivity of the porous SnO2 hydrogen-sensitive film prepared by the method is superior to that of a SnO2 film, the sensitivity of a sensor is remarkably improved, the sensitivity is improved to 30.4 from original 8 and the improvement multiple is about 4 times.
本发明公开了一种多孔SnO氢敏薄膜及其制备与应用,将SnCl·2HO溶于无水乙醇中,于60~70℃下搅拌均匀得到锡的前驱液;然后加入聚苯乙烯(PS)微球单分散液,在室温下搅拌均匀得到聚苯乙烯(PS)微球悬浮液的锡前驱液;将具有叉指铂电极的硅基片先后置于丙酮、无水乙醇和去离子水中分别用超声波清洗,然后置于烘箱烘干备用;将所得聚苯乙烯(PS)微球悬浮液的锡前驱液均匀旋涂在上述烘干的硅基片上,随后进行表面烘干;最后以1~3℃/min的升温速率加热至500℃煅烧2~3h,冷却后即得。本发明制备的多孔SnO氢敏薄膜气敏性能优于SnO薄膜,显著提高了传感器的灵敏度,灵敏度由原来的8提升至30.4,提升倍数约为4倍。
Porous SnO2 hydrogen-sensitive film and preparation and application thereof
一种多孔SnO氢敏薄膜及其制备与应用
YIN CHENBO (Autor:in) / HAN ZHONGJUN (Autor:in) / ZHANG SHIYUN (Autor:in) / REN JUN (Autor:in) / YIN MINGZHOU (Autor:in)
28.04.2020
Patent
Elektronische Ressource
Chinesisch
IPC:
C01G
Verbindungen der von den Unterklassen C01D oder C01F nicht umfassten Metalle
,
COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
/
C04B
Kalk
,
LIME
/
G01N
Untersuchen oder Analysieren von Stoffen durch Bestimmen ihrer chemischen oder physikalischen Eigenschaften
,
INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
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