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Low-temperature sintered SnO2-based voltage-sensitive ceramic material and preparation method thereof
The invention relates to a low-temperature sintered SnO2-based voltage-sensitive ceramic material and a preparation method thereof. The material is composed of SnO2, Zn2SnO4 and B4C powder, the molar ratio of the SnO2 powder to the Zn2SnO4 powder is 1: (0.2-0.5), and the molar addition amount of the B4C powder is 0.05-0.3% of the sum of the SnO2 powder and the Zn2SnO4 powder. The low-temperature sintered SnO2-based voltage-sensitive ceramic material can be obtained through a traditional ceramic preparation process. Compared with the existing SnO2-based voltage-sensitive ceramic, the low-temperature sintered SnO2-based voltage-sensitive ceramic material prepared by the invention has the advantages that the required sintering temperature is lower, the electrical property is more excellent, and the process is simple.
本发明涉及一种低温烧结SnO2基压敏陶瓷材料及其制备方法。该材料由SnO2，Zn2SnO4和B4C粉料组成，所述SnO2粉料和Zn2SnO4粉料的摩尔比为1:(0.2～0.5)，B4C粉料的摩尔添加量为SnO2粉料和Zn2SnO4粉料之和的0.05～0.3％。通过传统陶瓷制备工艺，即可获得一种低温烧结SnO2基压敏陶瓷材料。本发明制备的低温烧结的SnO2基压敏陶瓷材料，与现有SnO2基压敏陶瓷相比，所需要的烧结温度更低，电性能更优异，工艺简单。
Low-temperature sintered SnO2-based voltage-sensitive ceramic material and preparation method thereof
The invention relates to a low-temperature sintered SnO2-based voltage-sensitive ceramic material and a preparation method thereof. The material is composed of SnO2, Zn2SnO4 and B4C powder, the molar ratio of the SnO2 powder to the Zn2SnO4 powder is 1: (0.2-0.5), and the molar addition amount of the B4C powder is 0.05-0.3% of the sum of the SnO2 powder and the Zn2SnO4 powder. The low-temperature sintered SnO2-based voltage-sensitive ceramic material can be obtained through a traditional ceramic preparation process. Compared with the existing SnO2-based voltage-sensitive ceramic, the low-temperature sintered SnO2-based voltage-sensitive ceramic material prepared by the invention has the advantages that the required sintering temperature is lower, the electrical property is more excellent, and the process is simple.
本发明涉及一种低温烧结SnO2基压敏陶瓷材料及其制备方法。该材料由SnO2，Zn2SnO4和B4C粉料组成，所述SnO2粉料和Zn2SnO4粉料的摩尔比为1:(0.2～0.5)，B4C粉料的摩尔添加量为SnO2粉料和Zn2SnO4粉料之和的0.05～0.3％。通过传统陶瓷制备工艺，即可获得一种低温烧结SnO2基压敏陶瓷材料。本发明制备的低温烧结的SnO2基压敏陶瓷材料，与现有SnO2基压敏陶瓷相比，所需要的烧结温度更低，电性能更优异，工艺简单。
Low-temperature sintered SnO2-based voltage-sensitive ceramic material and preparation method thereof
一种低温烧结SnO2基压敏陶瓷材料及其制备方法
LU ZHENYA (Autor:in) / LUO YUCHUAN (Autor:in)
05.07.2024
Patent
Elektronische Ressource
Chinesisch
IPC:
C04B
Kalk
,
LIME
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