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Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Method for coating silicon carbide on graphite substrate
The invention relates to a silicon carbide coating method of a graphite base material. The present invention relates to a silicon carbide coating method capable of economically forming a silicon carbide coating on a substrate made of a graphite material by using a device having a simple structure and a raw material having excellent safety through simple engineering, particularly to a method for coating silicon carbide on a graphite substrate, wherein heat treatment is performed at 1200-2000 DEG C after a graphite substrate for forming a coating layer and solid silicon are introduced into a vacuum chamber.
本发明涉及石墨基材的碳化硅涂布方法。本发明涉及一种能够在石墨材料的基材上利用结构更加简单的装置以及安全性更加优秀的原料通过单纯的工程更加经济地形成碳化硅涂层的碳化硅涂布方法，尤其涉及一种在将用于形成涂层的石墨基材与固态硅投入到真空腔室中之后以1,200～2,000℃进行热处理的石墨基材的碳化硅涂布方法。
Method for coating silicon carbide on graphite substrate
The invention relates to a silicon carbide coating method of a graphite base material. The present invention relates to a silicon carbide coating method capable of economically forming a silicon carbide coating on a substrate made of a graphite material by using a device having a simple structure and a raw material having excellent safety through simple engineering, particularly to a method for coating silicon carbide on a graphite substrate, wherein heat treatment is performed at 1200-2000 DEG C after a graphite substrate for forming a coating layer and solid silicon are introduced into a vacuum chamber.
本发明涉及石墨基材的碳化硅涂布方法。本发明涉及一种能够在石墨材料的基材上利用结构更加简单的装置以及安全性更加优秀的原料通过单纯的工程更加经济地形成碳化硅涂层的碳化硅涂布方法，尤其涉及一种在将用于形成涂层的石墨基材与固态硅投入到真空腔室中之后以1,200～2,000℃进行热处理的石墨基材的碳化硅涂布方法。
Method for coating silicon carbide on graphite substrate
石墨基材的碳化硅涂布方法
KIM SEOK-JIN (Autor:in)
02.06.2020
Patent
Elektronische Ressource
Chinesisch
IPC:
C04B
Kalk
,
LIME
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