Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Tantalum carbide coating preparation method, graphite crucible and silicon carbide crystal growth device
The invention relates to the technical field of third-generation semiconductors, in particular to a tantalum carbide coating preparation method, a graphite crucible and a silicon carbide crystal growth device. Comprising the following steps: preparing and utilizing TaxOyCz intermediate powder to prepare a tantalum-containing turbid liquid, coating the tantalum-containing turbid liquid on the inner side wall and the inner bottom surface of a graphite crucible to form a pre-coating layer, and then carrying out second sintering to finally form the tantalum carbide coating layer. A mixture of liquid tantalum oxide and solid tantalum carbide is formed in the sintering process of TaxOyCz intermediate powder, tantalum oxide and graphite are subjected to a chemical reaction, a tantalum carbide coating is formed on the inner surface of the graphite crucible, the tantalum carbide coating is not prone to falling off, the liquid tantalum oxide drives solid tantalum carbide particles to flow on the inner surface of the graphite crucible, and therefore the tantalum carbide coating is formed. The tantalum carbide is filled into pores of the graphite material, so that the compactness of the tantalum carbide coating on the inner surface of the graphite crucible is improved. And meanwhile, the inner side wall of the graphite crucible is divided into an upper section, a middle section and a lower section for coating in a manner of different pre-coating thicknesses, so that the compactness of the tantalum carbide coating is further improved.
本发明涉及第三代半导体技术领域，特别涉及一种碳化钽涂层制备方法及石墨坩埚、碳化硅晶体生长装置。包括：制备并利用TaxOyCz中间体粉末制备含钽元素的悬浊液，并涂覆于石墨坩埚的内侧壁和内底面形成预涂层后进行第二烧结，最终形成碳化钽涂层。TaxOyCz中间体粉末在烧结过程中形成的液态氧化钽与固态碳化钽的混合体，氧化钽与石墨发生化学反应，在石墨坩埚内表面形成碳化钽涂层，使得碳化钽涂层不易脱落，液态的氧化钽带动固态的碳化钽颗粒在石墨坩埚内表面流动，使得碳化钽填充到石墨材料的孔隙中，提升了石墨坩埚内表面的碳化钽涂层的致密性。同时，石墨坩埚的内侧壁分为上、中、下三段不同预涂层厚度的方式进行涂覆，进一步提升了碳化钽涂层的致密性。
Tantalum carbide coating preparation method, graphite crucible and silicon carbide crystal growth device
The invention relates to the technical field of third-generation semiconductors, in particular to a tantalum carbide coating preparation method, a graphite crucible and a silicon carbide crystal growth device. Comprising the following steps: preparing and utilizing TaxOyCz intermediate powder to prepare a tantalum-containing turbid liquid, coating the tantalum-containing turbid liquid on the inner side wall and the inner bottom surface of a graphite crucible to form a pre-coating layer, and then carrying out second sintering to finally form the tantalum carbide coating layer. A mixture of liquid tantalum oxide and solid tantalum carbide is formed in the sintering process of TaxOyCz intermediate powder, tantalum oxide and graphite are subjected to a chemical reaction, a tantalum carbide coating is formed on the inner surface of the graphite crucible, the tantalum carbide coating is not prone to falling off, the liquid tantalum oxide drives solid tantalum carbide particles to flow on the inner surface of the graphite crucible, and therefore the tantalum carbide coating is formed. The tantalum carbide is filled into pores of the graphite material, so that the compactness of the tantalum carbide coating on the inner surface of the graphite crucible is improved. And meanwhile, the inner side wall of the graphite crucible is divided into an upper section, a middle section and a lower section for coating in a manner of different pre-coating thicknesses, so that the compactness of the tantalum carbide coating is further improved.
本发明涉及第三代半导体技术领域，特别涉及一种碳化钽涂层制备方法及石墨坩埚、碳化硅晶体生长装置。包括：制备并利用TaxOyCz中间体粉末制备含钽元素的悬浊液，并涂覆于石墨坩埚的内侧壁和内底面形成预涂层后进行第二烧结，最终形成碳化钽涂层。TaxOyCz中间体粉末在烧结过程中形成的液态氧化钽与固态碳化钽的混合体，氧化钽与石墨发生化学反应，在石墨坩埚内表面形成碳化钽涂层，使得碳化钽涂层不易脱落，液态的氧化钽带动固态的碳化钽颗粒在石墨坩埚内表面流动，使得碳化钽填充到石墨材料的孔隙中，提升了石墨坩埚内表面的碳化钽涂层的致密性。同时，石墨坩埚的内侧壁分为上、中、下三段不同预涂层厚度的方式进行涂覆，进一步提升了碳化钽涂层的致密性。
Tantalum carbide coating preparation method, graphite crucible and silicon carbide crystal growth device
碳化钽涂层制备方法及石墨坩埚、碳化硅晶体生长装置
YAN SHOULIANG (Autor:in) / ZHANG ZHENYUAN (Autor:in) / YUAN ZHIJIE (Autor:in) / LUO XIAOSHUANG (Autor:in) / WANG HAO (Autor:in) / WANG MINGHUA (Autor:in)
05.09.2023
Patent
Elektronische Ressource
Chinesisch
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