Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Preparation method of boron carbide ceramic
The invention relates to a preparation method of boron carbide ceramic. The method comprises the steps that chemical vapor deposition is adopted, nitrogen is taken as protective diluent gas, methane and gaseous BCl3 are taken as reaction gas, the reaction temperature is controlled to range from 1,500 DEG C to 2,000 DEG C, the pressure is controlled to range from 200 Pa to 1,000 Pa, and the boron carbide ceramic product is formed on a base mold. According to the method, the boron carbide material with the corresponding density is obtained by controlling the reaction temperature, and the controllability of material properties is improved. And the density of the boron carbide obtained at a high temperature can reach 2.5 g/cm < 3 >. The purity of the boron carbide material provided by the invention is 99.95 to 99.99 percent.
本发明涉及一种碳化硼陶瓷的制备方法。该方法包括采用化学气相沉积，以氮气作为保护稀释气体，以甲烷和气态BCl3为反应气体，反应温度控制在1500～2000℃之间，压力控制在200～1000Pa之间，在基体模具上形成碳化硼陶瓷制品。本发明通过控制反应温度来获得对应密度的碳化硼材料，提高了材料性质的可控性。在较高温度下获得碳化硼密度可达2.5g/cm3。本发明碳化硼材料的纯度为99.95‑99.99％。
Preparation method of boron carbide ceramic
The invention relates to a preparation method of boron carbide ceramic. The method comprises the steps that chemical vapor deposition is adopted, nitrogen is taken as protective diluent gas, methane and gaseous BCl3 are taken as reaction gas, the reaction temperature is controlled to range from 1,500 DEG C to 2,000 DEG C, the pressure is controlled to range from 200 Pa to 1,000 Pa, and the boron carbide ceramic product is formed on a base mold. According to the method, the boron carbide material with the corresponding density is obtained by controlling the reaction temperature, and the controllability of material properties is improved. And the density of the boron carbide obtained at a high temperature can reach 2.5 g/cm < 3 >. The purity of the boron carbide material provided by the invention is 99.95 to 99.99 percent.
本发明涉及一种碳化硼陶瓷的制备方法。该方法包括采用化学气相沉积，以氮气作为保护稀释气体，以甲烷和气态BCl3为反应气体，反应温度控制在1500～2000℃之间，压力控制在200～1000Pa之间，在基体模具上形成碳化硼陶瓷制品。本发明通过控制反应温度来获得对应密度的碳化硼材料，提高了材料性质的可控性。在较高温度下获得碳化硼密度可达2.5g/cm3。本发明碳化硼材料的纯度为99.95‑99.99％。
Preparation method of boron carbide ceramic
一种碳化硼陶瓷的制备方法
LIU RUQIANG (Autor:in) / WANG DIANCHUN (Autor:in) / LI XIAOMING (Autor:in) / WU SIHUA (Autor:in) / ZHOU QINGBO (Autor:in)
23.10.2020
Patent
Elektronische Ressource
Chinesisch
IPC:
C04B
Kalk
,
LIME
| Europäisches Patentamt | 2020
Boron carbide ceramic metallization preparation method
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