Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Preparation method of boron carbide ceramic
The invention discloses a preparation method of boron carbide ceramic, the preparation method comprises the following steps: firstly applying lower constant pressure to boron carbide, then adjusting the constant pressure to oscillation pressure at the highest sintering temperature, and finally adjusting the constant pressure to lower constant pressure at the cooling stage to obtain the boron carbide ceramic. According to the method, oscillation pressure is applied from the sintering middle stage to the sintering last stage, the densification mechanism of the boron carbide sintering process is changed, densification of pure boron carbide can be achieved at the temperature of 1700-1800 DEG C, the sintering pressure is small, a large number of crystal defects can be introduced in the sintering mode, the material performance is greatly improved, and the prepared boron carbide ceramic has high density. The requirements on the sintering equipment and the used graphite mold are reduced by adopting relatively low sintering pressure so that the preparation of a high-performance boron carbide ceramic component with a larger size is facilitated.
本发明公开了一种碳化硼陶瓷的制备方法，该制备方法首先对碳化硼施加较低的恒定压力，然后在最高烧结温度时将恒定压力调整为振荡压力，最后在冷却阶段调整为较低的恒定压力得到碳化硼陶瓷。该方法将振荡压力施加在烧结中期至烧结末期，其改变了碳化硼烧结过程的致密化机理，能够在1700‑1800℃实现纯碳化硼的致密化，且烧结压力较小，此种烧结方式可引入大量晶体缺陷，实现材料性能的大幅提升，所制备得到的碳化硼陶瓷致密度高。且本发明采用的较低的烧结压力降低了对烧结设备和所用石墨模具的要求，有助于制备更大尺寸的高性能碳化硼陶瓷构件。
Preparation method of boron carbide ceramic
The invention discloses a preparation method of boron carbide ceramic, the preparation method comprises the following steps: firstly applying lower constant pressure to boron carbide, then adjusting the constant pressure to oscillation pressure at the highest sintering temperature, and finally adjusting the constant pressure to lower constant pressure at the cooling stage to obtain the boron carbide ceramic. According to the method, oscillation pressure is applied from the sintering middle stage to the sintering last stage, the densification mechanism of the boron carbide sintering process is changed, densification of pure boron carbide can be achieved at the temperature of 1700-1800 DEG C, the sintering pressure is small, a large number of crystal defects can be introduced in the sintering mode, the material performance is greatly improved, and the prepared boron carbide ceramic has high density. The requirements on the sintering equipment and the used graphite mold are reduced by adopting relatively low sintering pressure so that the preparation of a high-performance boron carbide ceramic component with a larger size is facilitated.
本发明公开了一种碳化硼陶瓷的制备方法，该制备方法首先对碳化硼施加较低的恒定压力，然后在最高烧结温度时将恒定压力调整为振荡压力，最后在冷却阶段调整为较低的恒定压力得到碳化硼陶瓷。该方法将振荡压力施加在烧结中期至烧结末期，其改变了碳化硼烧结过程的致密化机理，能够在1700‑1800℃实现纯碳化硼的致密化，且烧结压力较小，此种烧结方式可引入大量晶体缺陷，实现材料性能的大幅提升，所制备得到的碳化硼陶瓷致密度高。且本发明采用的较低的烧结压力降低了对烧结设备和所用石墨模具的要求，有助于制备更大尺寸的高性能碳化硼陶瓷构件。
Preparation method of boron carbide ceramic
一种碳化硼陶瓷的制备方法
FAN LEI (Autor:in) / YANG SHOULEI (Autor:in) / ZHANG MENGWEN (Autor:in) / AN LINAN (Autor:in)
14.09.2021
Patent
Elektronische Ressource
Chinesisch
IPC:
C04B
Kalk
,
LIME
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