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Low-temperature sintered Al2O3 microwave dielectric material
The invention discloses a low-temperature sintered Al2O3 microwave dielectric material and a manufacturing method thereof. The preparation method is characterized in that 99.0 wt% of high-purity Al2O3powder is used as a main raw material, 1.0 wt% of a sintering aid formed by mixing a proper amount of CuO, TiO2 and MgO is added, the mixture is uniformly mixed and molded and then put into a mufflefurnace to be sintered for 46 h at the temperature of 1,150 DEG C and 1,250 DEG C, and the Al2O3 microwave dielectric material (the relative density is larger than or equal to 97%, the dielectric constant is 9.7-10.0 and the Q*f value is 86000-110000 GHz) is obtained. According to the method, the Al2O3 microwave dielectric material with high density and excellent dielectric property can be obtained at a lower temperature, and the method is simple in process, convenient to operate and beneficial to large-scale production, and has important significance in reducing energy consumption and protecting sustainable development of the environment.
本发明公开了一种低温烧结Al2O3微波介质材料及其制造方法。其特点是以99.0wt%高纯Al2O3粉体为主要原料加上1.0wt%由适量CuO、TiO2、MgO混合而成的烧结助剂，混合均匀并成型后，放入马弗炉中，在1150℃~1250℃下烧结4~6h，即可得到高致密度、介电性能优异的Al2O3微波介质材料（相对密度≥97%，介电常数：9.7~10.0，Q×f值：86000GHz~110000GHz）。本发明可在较低温度下获得致密度高、介电性能优良的Al2O3微波介质材料，且工艺简单、操作方便，有利于大规模生产，同时对减少能源消耗、保护环境可持续发展有着重要意义。
Low-temperature sintered Al2O3 microwave dielectric material
The invention discloses a low-temperature sintered Al2O3 microwave dielectric material and a manufacturing method thereof. The preparation method is characterized in that 99.0 wt% of high-purity Al2O3powder is used as a main raw material, 1.0 wt% of a sintering aid formed by mixing a proper amount of CuO, TiO2 and MgO is added, the mixture is uniformly mixed and molded and then put into a mufflefurnace to be sintered for 46 h at the temperature of 1,150 DEG C and 1,250 DEG C, and the Al2O3 microwave dielectric material (the relative density is larger than or equal to 97%, the dielectric constant is 9.7-10.0 and the Q*f value is 86000-110000 GHz) is obtained. According to the method, the Al2O3 microwave dielectric material with high density and excellent dielectric property can be obtained at a lower temperature, and the method is simple in process, convenient to operate and beneficial to large-scale production, and has important significance in reducing energy consumption and protecting sustainable development of the environment.
本发明公开了一种低温烧结Al2O3微波介质材料及其制造方法。其特点是以99.0wt%高纯Al2O3粉体为主要原料加上1.0wt%由适量CuO、TiO2、MgO混合而成的烧结助剂，混合均匀并成型后，放入马弗炉中，在1150℃~1250℃下烧结4~6h，即可得到高致密度、介电性能优异的Al2O3微波介质材料（相对密度≥97%，介电常数：9.7~10.0，Q×f值：86000GHz~110000GHz）。本发明可在较低温度下获得致密度高、介电性能优良的Al2O3微波介质材料，且工艺简单、操作方便，有利于大规模生产，同时对减少能源消耗、保护环境可持续发展有着重要意义。
Low-temperature sintered Al2O3 microwave dielectric material
一种低温烧结Al2O3微波介质材料
LI WEI (Autor:in) / DONG GUANGYU (Autor:in) / CHENG CHEN (Autor:in)
19.03.2021
Patent
Elektronische Ressource
Chinesisch
IPC:
C04B
Kalk
,
LIME
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