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Low-temperature sintered Al2O3 microwave dielectric material with high Q*f value
The invention discloses a low-temperature sintered Al2O3 microwave dielectric material with a high Q * f value and a preparation method of the low-temperature sintered Al2O3 microwave dielectric material. The preparation method is characterized in that 98.0 wt% of high-purity Al2O3 powder is taken as a main raw material, 2.0 wt% of a sintering aid composed of MnO2, CuO and TiO2 is added, the mixture is uniformly mixed and molded, the molded mixture is put into a muffle furnace and sintered at 1150-1300 DEG C for 5 h, and the Al2O3 microwave dielectric material with high density and high dielectric property (the relative density is greater than or equal to 98%, the dielectric constant is 9.1-10.1, and the Q * f value is 17000-52000 GHz) can be obtained. According to the invention, the Al2O3 microwave dielectric material with high density, good dielectric property and especially high Q * f value can be obtained at a low temperature, the process is simple, the operation is convenient, large-scale production is facilitated, energy consumption reduction and environmental protection are also facilitated, and the method has important significance for sustainable development.
本发明公开了一种低温烧结高Q×f值Al2O3微波介质材料及其制造方法。其特点是以98.0wt%高纯Al2O3粉体为主要原料，加上2.0wt%由MnO2、CuO、TiO2共同组成的烧结助剂，混合均匀并成型后，放入马弗炉中，在1150oC~1300oC下烧结5h，即可得到高致密度、高介电性能的Al2O3微波介质材料（相对密度≥98%，介电常数：9.1~10.1，Q×f值：17000GHz~52000GHz）。本发明可以在较低温度下获得致密度高、介电性能好特别是Q×f值较高的Al2O3微波介质材料，且工艺简单、操作方便，有利于大规模生产，也有利于减少能源消耗和环境保护，对可持续性发展具有重要意义。
Low-temperature sintered Al2O3 microwave dielectric material with high Q*f value
The invention discloses a low-temperature sintered Al2O3 microwave dielectric material with a high Q * f value and a preparation method of the low-temperature sintered Al2O3 microwave dielectric material. The preparation method is characterized in that 98.0 wt% of high-purity Al2O3 powder is taken as a main raw material, 2.0 wt% of a sintering aid composed of MnO2, CuO and TiO2 is added, the mixture is uniformly mixed and molded, the molded mixture is put into a muffle furnace and sintered at 1150-1300 DEG C for 5 h, and the Al2O3 microwave dielectric material with high density and high dielectric property (the relative density is greater than or equal to 98%, the dielectric constant is 9.1-10.1, and the Q * f value is 17000-52000 GHz) can be obtained. According to the invention, the Al2O3 microwave dielectric material with high density, good dielectric property and especially high Q * f value can be obtained at a low temperature, the process is simple, the operation is convenient, large-scale production is facilitated, energy consumption reduction and environmental protection are also facilitated, and the method has important significance for sustainable development.
本发明公开了一种低温烧结高Q×f值Al2O3微波介质材料及其制造方法。其特点是以98.0wt%高纯Al2O3粉体为主要原料，加上2.0wt%由MnO2、CuO、TiO2共同组成的烧结助剂，混合均匀并成型后，放入马弗炉中，在1150oC~1300oC下烧结5h，即可得到高致密度、高介电性能的Al2O3微波介质材料（相对密度≥98%，介电常数：9.1~10.1，Q×f值：17000GHz~52000GHz）。本发明可以在较低温度下获得致密度高、介电性能好特别是Q×f值较高的Al2O3微波介质材料，且工艺简单、操作方便，有利于大规模生产，也有利于减少能源消耗和环境保护，对可持续性发展具有重要意义。
Low-temperature sintered Al2O3 microwave dielectric material with high Q*f value
一种低温烧结高Q×f值Al2O3微波介质材料
LI WEI (Autor:in) / TAO HONGLEI (Autor:in) / ZHANG PENG (Autor:in)
22.03.2022
Patent
Elektronische Ressource
Chinesisch
IPC:
C04B
Kalk
,
LIME
Low-temperature sintered Al2O3 microwave dielectric material
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