Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Preparation method of ITO sintering target material
The invention discloses a preparation method of an ITO (indium tin oxide) sintering target material, which comprises a hot isostatic pressing method and a cold isostatic pressing method, and the hot isostatic pressing method and the cold isostatic pressing method comprise the following process steps of: preparing, blanking and sintering; the preparation process of the hot isostatic pressing methodand the cold isostatic pressing method comprises the following steps: single-phase ITO solid solution powder is partially reduced in a certain reducing atmosphere at a certain temperature, the reduction degree ranges from 0.02-0.2, in the preparation process, reducing atmosphere gas is composed of H2, mixed gas of H2 and N2, and the temperature is controlled to range from 300 DEG C to 500 DEG C.The hot isostatic pressing method and the cold isostatic pressing method are used in cooperation, the requirement for production of the target material with the complex appearance and the large size can be met, the production efficiency is higher, and mass production can be conducted.
本发明公开了一种ITO烧结靶材的制备方法，所述制备方法包括热等静压法和冷等静压法，所述热等静压法和冷等静压法工艺步骤均为：配置、制坯和烧结；所述热等静压法和冷等静压法的配置工艺为：将单相ITO固溶体粉末在一定还原气氛和温度下进行部分还原，还原度在0.02‑0.2之间，所述配置工艺中，还原气氛气体组成成分为H2、H2和N2的混合气体，温度控制在300‑500℃之间。本发明采用热等静压法和冷等静压法配合使用，能够实现对复杂外形和大尺寸的靶材进行生产的需要，并且生产的效率更高，能够进行大批量生产。
Preparation method of ITO sintering target material
The invention discloses a preparation method of an ITO (indium tin oxide) sintering target material, which comprises a hot isostatic pressing method and a cold isostatic pressing method, and the hot isostatic pressing method and the cold isostatic pressing method comprise the following process steps of: preparing, blanking and sintering; the preparation process of the hot isostatic pressing methodand the cold isostatic pressing method comprises the following steps: single-phase ITO solid solution powder is partially reduced in a certain reducing atmosphere at a certain temperature, the reduction degree ranges from 0.02-0.2, in the preparation process, reducing atmosphere gas is composed of H2, mixed gas of H2 and N2, and the temperature is controlled to range from 300 DEG C to 500 DEG C.The hot isostatic pressing method and the cold isostatic pressing method are used in cooperation, the requirement for production of the target material with the complex appearance and the large size can be met, the production efficiency is higher, and mass production can be conducted.
本发明公开了一种ITO烧结靶材的制备方法，所述制备方法包括热等静压法和冷等静压法，所述热等静压法和冷等静压法工艺步骤均为：配置、制坯和烧结；所述热等静压法和冷等静压法的配置工艺为：将单相ITO固溶体粉末在一定还原气氛和温度下进行部分还原，还原度在0.02‑0.2之间，所述配置工艺中，还原气氛气体组成成分为H2、H2和N2的混合气体，温度控制在300‑500℃之间。本发明采用热等静压法和冷等静压法配合使用，能够实现对复杂外形和大尺寸的靶材进行生产的需要，并且生产的效率更高，能够进行大批量生产。
Preparation method of ITO sintering target material
一种ITO烧结靶材的制备方法
TANG ZHIYONG (Autor:in)
02.04.2021
Patent
Elektronische Ressource
Chinesisch
Rapid sintering preparation method of Li4Ti5O12 ceramic target material
| Europäisches Patentamt | 2021
Sintering device and preparation method of oxide ceramic target material
| Europäisches Patentamt | 2020
Hot pressed sintering preparation method of tungsten oxide-based ceramic target material
| Europäisches Patentamt | 2021
Low-temperature rapid sintering preparation method of sodium molybdenum ceramic target material
| Europäisches Patentamt | 2024