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Low-temperature sintering method of high-performance silicon carbide ceramic material
The invention discloses a low-temperature sintering method of a high-performance silicon carbide ceramic material, and the method comprises the following steps: preparing a sintering aid composed of zinc h and zinc fluosilicate; weighing silicon carbide and a sintering aid, carrying out ball milling and mixing, carrying out negative pressure evaporation to dryness, carrying out crushing, carrying out sieving, and carrying out compression molding to obtain a green body; feeding the green body into an atmosphere sintering furnace, heating to 460-470 DEG C, keeping the temperature for 2-3 hours, introducing air into the atmosphere sintering furnace, carrying out heating to 1,800-1,940 DEG C, keeping the temperature for 2-3 hours, and performing cooling along with the furnace. The prepared silicon carbide ceramic material is good in compactness, good in bending strength and low in sintering temperature, energy consumption in the manufacturing process is reduced, market requirements can be met, and the silicon carbide ceramic material has good market prospects.
本发明公开了一种高性能的碳化硅陶瓷材料低温烧结方法,步骤如下:制备烧结助剂,所述烧结助剂由锌h和氟硅酸锌组成;称取碳化硅和烧结助剂,球磨混合获,然后进行负压蒸干后,粉碎,过筛,并模压成型,获得坯体;将坯体送入气氛烧结炉中,升温至460‑470℃,保温2‑3h,然后向气氛烧结炉内通入空气,升温至1800‑1940℃,保温2‑3h,随炉冷却后,即可。本发明制备的碳化硅陶瓷材料致密度良好,且具有良好的抗弯强度,烧结温度低,降低了制造过程中的能耗,能够满足市场需求,具有广阔的市场前景。
Low-temperature sintering method of high-performance silicon carbide ceramic material
The invention discloses a low-temperature sintering method of a high-performance silicon carbide ceramic material, and the method comprises the following steps: preparing a sintering aid composed of zinc h and zinc fluosilicate; weighing silicon carbide and a sintering aid, carrying out ball milling and mixing, carrying out negative pressure evaporation to dryness, carrying out crushing, carrying out sieving, and carrying out compression molding to obtain a green body; feeding the green body into an atmosphere sintering furnace, heating to 460-470 DEG C, keeping the temperature for 2-3 hours, introducing air into the atmosphere sintering furnace, carrying out heating to 1,800-1,940 DEG C, keeping the temperature for 2-3 hours, and performing cooling along with the furnace. The prepared silicon carbide ceramic material is good in compactness, good in bending strength and low in sintering temperature, energy consumption in the manufacturing process is reduced, market requirements can be met, and the silicon carbide ceramic material has good market prospects.
本发明公开了一种高性能的碳化硅陶瓷材料低温烧结方法,步骤如下:制备烧结助剂,所述烧结助剂由锌h和氟硅酸锌组成;称取碳化硅和烧结助剂,球磨混合获,然后进行负压蒸干后,粉碎,过筛,并模压成型,获得坯体;将坯体送入气氛烧结炉中,升温至460‑470℃,保温2‑3h,然后向气氛烧结炉内通入空气,升温至1800‑1940℃,保温2‑3h,随炉冷却后,即可。本发明制备的碳化硅陶瓷材料致密度良好,且具有良好的抗弯强度,烧结温度低,降低了制造过程中的能耗,能够满足市场需求,具有广阔的市场前景。
Low-temperature sintering method of high-performance silicon carbide ceramic material
一种高性能的碳化硅陶瓷材料低温烧结方法
TAI ZHAOSHAN (Autor:in)
06.04.2021
Patent
Elektronische Ressource
Chinesisch
IPC:
C04B
Kalk
,
LIME
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