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Low-temperature sintering method of high-performance silicon carbide ceramic material
The invention relates to the technical field of ceramic material preparation, in particular to a low-temperature sintering method of a high-performance silicon carbide ceramic material. Preparing materials: selecting proper silicon carbide powder, selecting high-purity silicon carbide powder with the particle size range of 0.1-10 microns, and selecting proper dopant powder; material mixing: uniformly mixing the silicon carbide powder and dopant powder to ensure that the dopant can be uniformly distributed in the silicon carbide ceramic material in the sintering process; briquetting treatment: briquetting the mixed silicon carbide powder and dopant powder to form a uniform pre-sintered block; and sintering the pre-sintered block in a vacuum or protective atmosphere after low-temperature sintering. The method has the advantages of favorable mechanical properties, favorable heat resistance and favorable oxidation resistance, breaks through the limitation of the traditional sintering method, and has favorable application prospects.
本发明涉及陶瓷材料制备技术领域，具体涉及一种高性能的碳化硅陶瓷材料低温烧结方法，包括以下步骤；准备材料：选择适当的碳化硅粉末，选取粒径范围为0.1‑10微米的高纯度碳化硅粉末，选择适当的掺杂剂粉末；混合材料：将碳化硅粉末与掺杂剂粉末混合均匀，以确保烧结过程中掺杂剂能够均匀分布在碳化硅陶瓷材料中；压块处理：对混合的碳化硅粉末和掺杂剂粉末进行压块处理，形成均匀的预烧结块体；低温烧结后将预烧结块体在真空或保护气氛中进行烧结。本发明，具有良好的力学性能、耐热性和抗氧化性，突破了传统烧结方法的限制，具有很好的应用前景。
Low-temperature sintering method of high-performance silicon carbide ceramic material
The invention relates to the technical field of ceramic material preparation, in particular to a low-temperature sintering method of a high-performance silicon carbide ceramic material. Preparing materials: selecting proper silicon carbide powder, selecting high-purity silicon carbide powder with the particle size range of 0.1-10 microns, and selecting proper dopant powder; material mixing: uniformly mixing the silicon carbide powder and dopant powder to ensure that the dopant can be uniformly distributed in the silicon carbide ceramic material in the sintering process; briquetting treatment: briquetting the mixed silicon carbide powder and dopant powder to form a uniform pre-sintered block; and sintering the pre-sintered block in a vacuum or protective atmosphere after low-temperature sintering. The method has the advantages of favorable mechanical properties, favorable heat resistance and favorable oxidation resistance, breaks through the limitation of the traditional sintering method, and has favorable application prospects.
本发明涉及陶瓷材料制备技术领域，具体涉及一种高性能的碳化硅陶瓷材料低温烧结方法，包括以下步骤；准备材料：选择适当的碳化硅粉末，选取粒径范围为0.1‑10微米的高纯度碳化硅粉末，选择适当的掺杂剂粉末；混合材料：将碳化硅粉末与掺杂剂粉末混合均匀，以确保烧结过程中掺杂剂能够均匀分布在碳化硅陶瓷材料中；压块处理：对混合的碳化硅粉末和掺杂剂粉末进行压块处理，形成均匀的预烧结块体；低温烧结后将预烧结块体在真空或保护气氛中进行烧结。本发明，具有良好的力学性能、耐热性和抗氧化性，突破了传统烧结方法的限制，具有很好的应用前景。
Low-temperature sintering method of high-performance silicon carbide ceramic material
一种高性能的碳化硅陶瓷材料低温烧结方法
MA LIANGLAI (Autor:in) / JIANG YOULIN (Autor:in)
21.11.2023
Patent
Elektronische Ressource
Chinesisch
IPC:
C04B
Kalk
,
LIME
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