Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Graphite crucible for purifying polycrystalline silicon
The invention relates to the technical field of graphite crucibles, and discloses a graphite crucible for purifying polycrystalline silicon, the graphite crucible comprises a graphite crucible base body, a Si3N4 coating is attached to the surface of the graphite crucible base body, and the preparation method of the Si3N4 coating comprises the following steps: preparing Si3N4 slurry; preheating the graphite crucible base body at the temperature of 45-60 DEG C; evenly brushing the surface of a graphite crucible base body with the Si3N4 slurry in three times, and placing the graphite crucible base body brushed with the Si3N4 slurry in a vacuum drying box at the temperature of 45-60 DEG C to be dried; and transferring the graphite crucible base body with the Si3N4 slurry cured on the surface into a quartz heating furnace chamber, introducing nitrogen, and carrying out heat preservation roasting at 1050-1200 DEG C to obtain the graphite crucible. The technical problem that in the process of smelting polycrystalline silicon at high temperature, graphite carbon reacts with silicon steam to generate SiC, so that the crucible and a silicon block are bonded in the existing graphite crucible is solved.
本发明涉及石墨坩埚技术领域，且公开了一种提纯多晶硅使用的石墨坩埚，包括石墨坩埚基体，在石墨坩埚基体的表面上附着有Si3N4涂层，该Si3N4涂层的制备方法包括：制备Si3N4浆料；将石墨坩埚基体在45～60℃下预热；将Si3N4浆料分三次均匀涂刷在石墨坩埚基体的表面上，将涂刷Si3N4浆料的石墨坩埚基体放置在45～60℃的真空干燥箱内干燥；将表面固化有Si3N4浆料的石墨坩埚基体移到石英加热炉腔内，先通入氮气，在1050～1200℃下保温焙烧，即得到石墨坩埚。本发明解决了目前的石墨坩埚，在高温熔炼多晶硅的过程中，石墨炭素会与硅蒸汽发生反应生成SiC，导致坩埚与硅块发生粘合的技术问题。
Graphite crucible for purifying polycrystalline silicon
The invention relates to the technical field of graphite crucibles, and discloses a graphite crucible for purifying polycrystalline silicon, the graphite crucible comprises a graphite crucible base body, a Si3N4 coating is attached to the surface of the graphite crucible base body, and the preparation method of the Si3N4 coating comprises the following steps: preparing Si3N4 slurry; preheating the graphite crucible base body at the temperature of 45-60 DEG C; evenly brushing the surface of a graphite crucible base body with the Si3N4 slurry in three times, and placing the graphite crucible base body brushed with the Si3N4 slurry in a vacuum drying box at the temperature of 45-60 DEG C to be dried; and transferring the graphite crucible base body with the Si3N4 slurry cured on the surface into a quartz heating furnace chamber, introducing nitrogen, and carrying out heat preservation roasting at 1050-1200 DEG C to obtain the graphite crucible. The technical problem that in the process of smelting polycrystalline silicon at high temperature, graphite carbon reacts with silicon steam to generate SiC, so that the crucible and a silicon block are bonded in the existing graphite crucible is solved.
本发明涉及石墨坩埚技术领域，且公开了一种提纯多晶硅使用的石墨坩埚，包括石墨坩埚基体，在石墨坩埚基体的表面上附着有Si3N4涂层，该Si3N4涂层的制备方法包括：制备Si3N4浆料；将石墨坩埚基体在45～60℃下预热；将Si3N4浆料分三次均匀涂刷在石墨坩埚基体的表面上，将涂刷Si3N4浆料的石墨坩埚基体放置在45～60℃的真空干燥箱内干燥；将表面固化有Si3N4浆料的石墨坩埚基体移到石英加热炉腔内，先通入氮气，在1050～1200℃下保温焙烧，即得到石墨坩埚。本发明解决了目前的石墨坩埚，在高温熔炼多晶硅的过程中，石墨炭素会与硅蒸汽发生反应生成SiC，导致坩埚与硅块发生粘合的技术问题。
Graphite crucible for purifying polycrystalline silicon
一种提纯多晶硅使用的石墨坩埚
WANG QINGHUI (Autor:in)
27.04.2021
Patent
Elektronische Ressource
Chinesisch
| Europäisches Patentamt | 2016
Graphite crucible repairing material and graphite crucible repairing method
| Europäisches Patentamt | 2024
| Engineering Index Backfile | 1935