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Method for preparing high-entropy boron ceramic surface material by microwave sintering
The invention discloses a method for preparing a high-entropy boron ceramic surface material by microwave sintering, which comprises the following steps of: putting nitride ceramic substrate blanks into an auxiliary heating insulation structure in a microwave sintering cavity, neatly stacking the nitride ceramic substrate blanks, arranging a graphite plate between the nitride ceramic substrate blanks, introducing a nitrogen atmosphere containing 7-10% of hydrogen, carrying out normal-pressure microwave sintering at the frequency of 2.45 GHz and at 500-3000 DEG C at a heating rate of 8-10 DEG C/min, carrying out heat preservation for 2-10 hours, carrying out furnace cooling until the temperature is 400 DEG C or less, opening the furnace, and taking out an obtained material to obtain the compact high-quality nitride ceramic substrate sintered body. The method has the beneficial effects that the reaction sintering process is accelerated, the nitride ceramic material is sintered under normal pressure at a relatively low temperature in a relatively short time, and the method has the characteristics of high temperature rise speed, low sintering temperature, short heat preservation time, relatively good performance, energy conservation and high production efficiency; and the method is suitable for large-scale production.
本发明公开了一种利用微波烧结制备高熵硼陶瓷表面材料的方法，包括将氮化物陶瓷基片坯料放入微波烧结腔内的辅热保温结构内，叠放整齐，氮化物陶瓷基片坯料与氮化物陶瓷基片坯料之间设置有石墨板，微波烧结频率为2.45GHz，通入含氢7～10％的氮气氛，常压微波烧结温度为500～3000℃，升温速率为8～10℃/min，保温2‑10小时，随炉冷却，至400℃以下时开炉取出，得到致密的高质量氮化物陶瓷基片烧结体。本发明的有益效果是：本发明是一种加快反应烧结进程，在较低的温度、较短的时间内，在常压下烧结氮化物陶瓷材料的微波烧结氮化物陶瓷材料的方法，具有升温速度快，烧结温度低，保温时间短，性能较好，节约能源，生产效率高的特点，适合大规模生产。
Method for preparing high-entropy boron ceramic surface material by microwave sintering
The invention discloses a method for preparing a high-entropy boron ceramic surface material by microwave sintering, which comprises the following steps of: putting nitride ceramic substrate blanks into an auxiliary heating insulation structure in a microwave sintering cavity, neatly stacking the nitride ceramic substrate blanks, arranging a graphite plate between the nitride ceramic substrate blanks, introducing a nitrogen atmosphere containing 7-10% of hydrogen, carrying out normal-pressure microwave sintering at the frequency of 2.45 GHz and at 500-3000 DEG C at a heating rate of 8-10 DEG C/min, carrying out heat preservation for 2-10 hours, carrying out furnace cooling until the temperature is 400 DEG C or less, opening the furnace, and taking out an obtained material to obtain the compact high-quality nitride ceramic substrate sintered body. The method has the beneficial effects that the reaction sintering process is accelerated, the nitride ceramic material is sintered under normal pressure at a relatively low temperature in a relatively short time, and the method has the characteristics of high temperature rise speed, low sintering temperature, short heat preservation time, relatively good performance, energy conservation and high production efficiency; and the method is suitable for large-scale production.
本发明公开了一种利用微波烧结制备高熵硼陶瓷表面材料的方法，包括将氮化物陶瓷基片坯料放入微波烧结腔内的辅热保温结构内，叠放整齐，氮化物陶瓷基片坯料与氮化物陶瓷基片坯料之间设置有石墨板，微波烧结频率为2.45GHz，通入含氢7～10％的氮气氛，常压微波烧结温度为500～3000℃，升温速率为8～10℃/min，保温2‑10小时，随炉冷却，至400℃以下时开炉取出，得到致密的高质量氮化物陶瓷基片烧结体。本发明的有益效果是：本发明是一种加快反应烧结进程，在较低的温度、较短的时间内，在常压下烧结氮化物陶瓷材料的微波烧结氮化物陶瓷材料的方法，具有升温速度快，烧结温度低，保温时间短，性能较好，节约能源，生产效率高的特点，适合大规模生产。
Method for preparing high-entropy boron ceramic surface material by microwave sintering
一种利用微波烧结制备高熵硼陶瓷表面材料的方法
TAI ZHAOSHAN (Autor:in)
07.05.2021
Patent
Elektronische Ressource
Chinesisch
IPC:
C04B
Kalk
,
LIME
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