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High-thermal-conductivity silicon carbide material and preparation method thereof
The invention relates to the field of mechanical sealing element materials, and particularly discloses a high-thermal-conductivity silicon carbide material and a preparation method thereof. The high-thermal-conductivity silicon carbide material consists of the following raw materials in parts by weight: 65-75 parts of silicon carbide, 3-10 parts of diamond, 18-22 parts of graphite powder, 1-5 parts of a binder, 2-10 parts of a sintering aid, 1-3 parts of boron powder and 5-15 parts of a silicon wafer. The preparation method comprises the following steps: S1, weighing the raw materials according to the formula proportion, adding water, and uniformly mixing to obtain slurry; s2, carrying out spray drying granulation on the slurry obtained in the step S1 to obtain particles; s3, carrying out compression molding on the particles in the S2 to obtain a biscuit; s4, baking and forming the biscuit in the S3, and then processing; and S5, performing vacuum sintering, and naturally cooling to obtain the high-thermal-conductivity silicon carbide material. The high-thermal-conductivity silicon carbide material can be used for preparing mechanical sealing rings and has good thermal conductivity.
本申请涉及机械密封件材料领域,具体公开了一种高导热碳化硅材料及其制备方法。高导热碳化硅材料由以下重量份数的原料组成:碳化硅65‑75份,金刚石3‑10份,石墨粉18‑22份,粘结剂1‑5份,助烧剂2‑10份、硼粉1‑3份和硅片5‑15份;其制备方法为:S1、根据配方比例称取各原料,加水混合均匀,得到料浆;S2、将S1中的料浆经喷雾干燥造粒,得到颗粒;S3、将S2中的颗粒压制成型,得到素坯;S4、将S3中的素坯烘焙成型,然后进行加工;S5、真空烧结,经自然冷却后得到高导热碳化硅材料。本申请的高导热碳化硅材料可用于制备机械密封环,其具有良好的热传导性能。
High-thermal-conductivity silicon carbide material and preparation method thereof
The invention relates to the field of mechanical sealing element materials, and particularly discloses a high-thermal-conductivity silicon carbide material and a preparation method thereof. The high-thermal-conductivity silicon carbide material consists of the following raw materials in parts by weight: 65-75 parts of silicon carbide, 3-10 parts of diamond, 18-22 parts of graphite powder, 1-5 parts of a binder, 2-10 parts of a sintering aid, 1-3 parts of boron powder and 5-15 parts of a silicon wafer. The preparation method comprises the following steps: S1, weighing the raw materials according to the formula proportion, adding water, and uniformly mixing to obtain slurry; s2, carrying out spray drying granulation on the slurry obtained in the step S1 to obtain particles; s3, carrying out compression molding on the particles in the S2 to obtain a biscuit; s4, baking and forming the biscuit in the S3, and then processing; and S5, performing vacuum sintering, and naturally cooling to obtain the high-thermal-conductivity silicon carbide material. The high-thermal-conductivity silicon carbide material can be used for preparing mechanical sealing rings and has good thermal conductivity.
本申请涉及机械密封件材料领域,具体公开了一种高导热碳化硅材料及其制备方法。高导热碳化硅材料由以下重量份数的原料组成:碳化硅65‑75份,金刚石3‑10份,石墨粉18‑22份,粘结剂1‑5份,助烧剂2‑10份、硼粉1‑3份和硅片5‑15份;其制备方法为:S1、根据配方比例称取各原料,加水混合均匀,得到料浆;S2、将S1中的料浆经喷雾干燥造粒,得到颗粒;S3、将S2中的颗粒压制成型,得到素坯;S4、将S3中的素坯烘焙成型,然后进行加工;S5、真空烧结,经自然冷却后得到高导热碳化硅材料。本申请的高导热碳化硅材料可用于制备机械密封环,其具有良好的热传导性能。
High-thermal-conductivity silicon carbide material and preparation method thereof
一种高导热碳化硅材料及其制备方法
SHI HUI (Autor:in) / ZHOU XUANHAO (Autor:in) / ZHANG MINFEI (Autor:in)
11.06.2021
Patent
Elektronische Ressource
Chinesisch
IPC:
C04B
Kalk
,
LIME
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