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Interface layer structure of SiCf/SiC composite material fuel cladding and preparation method
The invention belongs to the technical field of interface layers of SiCf/SiC composite material fuel claddings, and particularly relates to an interface layer structure of a SiCf/SiC composite material fuel cladding and a preparation method. A PyC interface layer, a SiC interface layer, a PyC interface layer and a SiC interface layer are sequentially arranged from inside to outside. The method comprises the steps of sequentially putting a silicon carbide fiber preform into acetone and ethanol for ultrasonic cleaning, and drying in a drying box; placing the perform in a deposition furnace for interface layer preparation; vacuumizing the deposition furnace, heating, and sequentially introducing argon gas and methane gas into the deposition furnace; stopping introducing methane, only introducing argon, and then introducing hydrogen and trichloromethylsilane in sequence; sequentially stopping introducing trichloromethylsilane and hydrogen, introducing argon, introducing methane, and depositing pyrolytic carbon; a depositing a silicon carbide interface layer, after heat preservation is finished, sequentially stopping introduction of trichloromethylsilane and hydrogen, continuously introducing argon, and conducting furnace cooling to the room temperature; and putting the preform into the deposition furnace to be densified through a chemical vapor infiltration technology. The interface layer prepared by the method is suitable for the SiCf/SiC composite material cladding tube with the wall thickness of 0.5-2mm.
本发明属于SiCf/SiC复合材料燃料包壳的界面层技术领域,具体涉及一种SiCf/SiC复合材料燃料包壳的界面层结构及制备方法。由内向外依次为PyC、SiC、PyC、SiC界面层。将碳化硅纤维预制件依次放入丙酮、乙醇中超声清洗,在烘干箱烘干;将预制件放入沉积炉中进行界面层制备:沉积炉抽真空,升温,依次通入氩气、甲烷气体;停止通入甲烷,只通入氩气,再依次通入氢气,三氯甲基硅烷;依次停止通入三氯甲基硅烷和氢气,通入氩气,通入甲烷,沉积热解碳;沉积碳化硅界面层,保温结束后,依次停止通入三氯甲基硅烷和氢气,持续通入氩气,随炉冷却至室温;将预制件,放入沉积炉中通过化学气相渗透工艺进行致密化。本发明制备的界面层适用于壁厚为0.5~2mm的SiCf/SiC复合材料包壳管。
Interface layer structure of SiCf/SiC composite material fuel cladding and preparation method
The invention belongs to the technical field of interface layers of SiCf/SiC composite material fuel claddings, and particularly relates to an interface layer structure of a SiCf/SiC composite material fuel cladding and a preparation method. A PyC interface layer, a SiC interface layer, a PyC interface layer and a SiC interface layer are sequentially arranged from inside to outside. The method comprises the steps of sequentially putting a silicon carbide fiber preform into acetone and ethanol for ultrasonic cleaning, and drying in a drying box; placing the perform in a deposition furnace for interface layer preparation; vacuumizing the deposition furnace, heating, and sequentially introducing argon gas and methane gas into the deposition furnace; stopping introducing methane, only introducing argon, and then introducing hydrogen and trichloromethylsilane in sequence; sequentially stopping introducing trichloromethylsilane and hydrogen, introducing argon, introducing methane, and depositing pyrolytic carbon; a depositing a silicon carbide interface layer, after heat preservation is finished, sequentially stopping introduction of trichloromethylsilane and hydrogen, continuously introducing argon, and conducting furnace cooling to the room temperature; and putting the preform into the deposition furnace to be densified through a chemical vapor infiltration technology. The interface layer prepared by the method is suitable for the SiCf/SiC composite material cladding tube with the wall thickness of 0.5-2mm.
本发明属于SiCf/SiC复合材料燃料包壳的界面层技术领域,具体涉及一种SiCf/SiC复合材料燃料包壳的界面层结构及制备方法。由内向外依次为PyC、SiC、PyC、SiC界面层。将碳化硅纤维预制件依次放入丙酮、乙醇中超声清洗,在烘干箱烘干;将预制件放入沉积炉中进行界面层制备:沉积炉抽真空,升温,依次通入氩气、甲烷气体;停止通入甲烷,只通入氩气,再依次通入氢气,三氯甲基硅烷;依次停止通入三氯甲基硅烷和氢气,通入氩气,通入甲烷,沉积热解碳;沉积碳化硅界面层,保温结束后,依次停止通入三氯甲基硅烷和氢气,持续通入氩气,随炉冷却至室温;将预制件,放入沉积炉中通过化学气相渗透工艺进行致密化。本发明制备的界面层适用于壁厚为0.5~2mm的SiCf/SiC复合材料包壳管。
Interface layer structure of SiCf/SiC composite material fuel cladding and preparation method
一种SiCf/SiC复合材料燃料包壳的界面层结构及制备方法
JIA XINLEI (Autor:in) / LU YONGHENG (Autor:in) / LIU JIANCHENG (Autor:in) / SHAN HONGYI (Autor:in) / DONG QIUSHI (Autor:in) / MENG YING (Autor:in)
22.06.2021
Patent
Elektronische Ressource
Chinesisch
IPC:
C04B
Kalk
,
LIME
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