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Silicon carbide nano-particles and preparation method and application thereof
The invention discloses silicon carbide nano-particles and a preparation method and application thereof.The preparation method is characterized in that a silicon-containing organic precursor is adopted as a carbon source and a silicon source and guided to an atmospheric pressure non-equilibrium plasma area, reaction is conducted under plasma induction, and the superfine amorphous silicon carbide nano-particles are prepared; the preparation process is simple, reaction conditions are mild, cost is low, and application prospects are achieved.
本发明公开了一种碳化硅纳米颗粒及其制备方法和应用，该制备方法采用含硅有机前驱体作为碳源和硅源，将其引导至大气压非平衡等离子体区域，在等离子体诱导下反应制得超细非晶碳化硅纳米颗粒，该制备工艺步骤简单，反应条件温和且成本低廉，具有应用前景。
Silicon carbide nano-particles and preparation method and application thereof
The invention discloses silicon carbide nano-particles and a preparation method and application thereof.The preparation method is characterized in that a silicon-containing organic precursor is adopted as a carbon source and a silicon source and guided to an atmospheric pressure non-equilibrium plasma area, reaction is conducted under plasma induction, and the superfine amorphous silicon carbide nano-particles are prepared; the preparation process is simple, reaction conditions are mild, cost is low, and application prospects are achieved.
本发明公开了一种碳化硅纳米颗粒及其制备方法和应用，该制备方法采用含硅有机前驱体作为碳源和硅源，将其引导至大气压非平衡等离子体区域，在等离子体诱导下反应制得超细非晶碳化硅纳米颗粒，该制备工艺步骤简单，反应条件温和且成本低廉，具有应用前景。
Silicon carbide nano-particles and preparation method and application thereof
碳化硅纳米颗粒及其制备方法和应用
WANG CHENG (Autor:in) / ZHOU JIAWEN (Autor:in) / XIA WEIDONG (Autor:in)
13.07.2021
Patent
Elektronische Ressource
Chinesisch
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