Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Indium-zirconium oxide target material, preparation method thereof and indium-zirconium oxide film
The invention provides an indium-zirconium oxide target material, a preparation method thereof and an indium-zirconium oxide film. The indium-zirconium oxide target material comprises indium, zirconium and oxygen. The ratio of the number of zirconium atoms to the total number of indium and zirconium atoms is greater than or equal to 0.18 and less than or equal to 0.40. And the average volume resistivity of the indium zirconium oxide target material is greater than or equal to 8 * 10 <-3 > ohm-cm and less than or equal to 5 * 10 <-2 > ohm-cm. The sheet resistance value of the indium zirconium oxide film formed by sputtering the indium zirconium oxide target material is greater than or equal to 1 * 10 < 7 > ohm/unit area and less than or equal to 1 * 10 < 10 > ohm/unit area. The indium zirconium oxide film with the high sheet resistance value can be applied to an embedded touch panel.
本发明提供一种铟锆氧化物靶材及其制法及铟锆氧化物薄膜，其包含铟、锆及氧，其中锆原子数相对于铟及锆的原子总数的比值大于或等于0.18且小于或等于0.40，且该铟锆氧化物靶材的平均体电阻率大于或等于8×10‑3欧姆‑厘米且小于或等于5×10‑2欧姆‑厘米。以此铟锆氧化物靶材溅镀形成的铟锆氧化物薄膜的片电阻值大于或等于1×107欧姆/单位面积且小于或等于1×1010欧姆/单位面积，此高片电阻值的铟锆氧化物薄膜可应用于内嵌式触控面板。
Indium-zirconium oxide target material, preparation method thereof and indium-zirconium oxide film
The invention provides an indium-zirconium oxide target material, a preparation method thereof and an indium-zirconium oxide film. The indium-zirconium oxide target material comprises indium, zirconium and oxygen. The ratio of the number of zirconium atoms to the total number of indium and zirconium atoms is greater than or equal to 0.18 and less than or equal to 0.40. And the average volume resistivity of the indium zirconium oxide target material is greater than or equal to 8 * 10 <-3 > ohm-cm and less than or equal to 5 * 10 <-2 > ohm-cm. The sheet resistance value of the indium zirconium oxide film formed by sputtering the indium zirconium oxide target material is greater than or equal to 1 * 10 < 7 > ohm/unit area and less than or equal to 1 * 10 < 10 > ohm/unit area. The indium zirconium oxide film with the high sheet resistance value can be applied to an embedded touch panel.
本发明提供一种铟锆氧化物靶材及其制法及铟锆氧化物薄膜，其包含铟、锆及氧，其中锆原子数相对于铟及锆的原子总数的比值大于或等于0.18且小于或等于0.40，且该铟锆氧化物靶材的平均体电阻率大于或等于8×10‑3欧姆‑厘米且小于或等于5×10‑2欧姆‑厘米。以此铟锆氧化物靶材溅镀形成的铟锆氧化物薄膜的片电阻值大于或等于1×107欧姆/单位面积且小于或等于1×1010欧姆/单位面积，此高片电阻值的铟锆氧化物薄膜可应用于内嵌式触控面板。
Indium-zirconium oxide target material, preparation method thereof and indium-zirconium oxide film
铟锆氧化物靶材及其制法及铟锆氧化物薄膜
KE BOXIAN (Autor:in) / XIE CHENGYAN (Autor:in) / JIAN YUCANG (Autor:in) / LIU YANMING (Autor:in)
03.08.2021
Patent
Elektronische Ressource
Chinesisch
| Europäisches Patentamt | 2023
Indium oxide target material and preparation method thereof
| Europäisches Patentamt | 2022
Indium tin zinc oxide target material, oxide film and preparation method thereof
| Europäisches Patentamt | 2022
Electrical Property of Calcium-Zirconium-Indium Oxide by Irradiation
| British Library Online Contents | 2005
Indium cerium oxide target material and preparation method thereof
| Europäisches Patentamt | 2024