Indium oxide target material and preparation method thereof: Fid-Bau Portal

Indium oxide target material and preparation method thereof

LEI YU / XU JIWEN / ZHOU ZHIHONG / XIAO SHIHONG / ZHOU ZHAOYU / YANG YONGTIAN

The invention provides an indium oxide target material and a preparation method thereof. The indium oxide target material comprises the following raw material components: cerium oxide, and indium oxide, wherein the mass percent of cerium oxide is 2-5%. The preparation method of the indium oxide target material comprises the following steps: obtaining target material raw materials according to the raw material component proportion of the indium oxide target material; grinding the target raw materials through a ball mill to obtain first-stage grinding slurry; carrying out sanding grinding on the first-stage grinding slurry to obtain second-stage grinding slurry; granulating the second-stage grinding slurry to obtain granules; performing cold isostatic pressing on the granules to obtain a biscuit; and sintering the biscuit to obtain the target material. The indium oxide target material provided by the invention is prepared from the following raw material components: cerium oxide and indium oxide, wherein the mass percent of the cerium oxide is 2-5%. Through selection and proportioning of the material components, the prepared indium oxide target material is high in density and good in component distribution uniformity, so that the performance of a conductive oxide film prepared by using the target material is improved.

本发明提供了一种氧化铟靶材和氧化铟靶材制备方法，其中，氧化铟靶材的原料组分包括：氧化铈；氧化铟；其中，氧化铈的质量百分比为2至5。氧化铟靶材制备方法包括：按照氧化铟靶材的原料组分配比获取靶材原料；将靶材原料通过球磨研磨，获取一段研磨浆料；对一段研磨浆料进行砂磨研磨，获取二段研磨浆料；对二段研磨浆料进行造粒，获取粒料；对粒料进行冷等静压，获取素坯；对素坯进行烧结，获取靶材。本发明提供了的氧化铟靶材制备氧化铟靶材的原料组分包括氧化铈和氧化铟，氧化铈的质量百分比为2至5。通过该材料组分的选取及配比，使得制备获取的氧化铟靶材密度高、成分分布均匀性好，使得使用该靶材制备的导电氧化物薄膜性能得到提高。

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