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High curie point silicon substrate ferroelectric film material and preparation and application thereof
The invention relates to a high curie point silicon substrate ferroelectric film material and preparation and application thereof. The ferroelectric film material comprises a Pt/Ti/SiO2/Si substrate, a conductive buffer layer and a film layer, wherein the conductive buffer layer and the film layer are sequentially deposited on the surface of the substrate from inside to outside, the conductive buffer layer is lanthanum strontium cobalt oxide, and the thin film layer is manganese-doped lead indium niobate-lead magnesium niobate-lead titanate (abbreviated as Mn-PIN-PMN-PT), the chemical composition of the thin film layer is zMn-(1-x-y) Pb (In1/2Nb1/2) O3-yPb (Mg1/3Nb2/3) O3-xPbTiO3, x is equal to 0.20-0.40, y is equal to 0.20-0.50, and z is equal to 0.003-0.01. Compared with the prior art, the prepared film has excellent ferroelectric, piezoelectric and pyroelectric properties, and is suitable for novel piezoelectric and pyroelectric integrated devices.
本发明涉及一种高居里点硅衬底铁电薄膜材料及其制备与应用，所述铁电薄膜材料包括Pt/Ti/SiO2/Si衬底以及自内向外依次沉积在衬底表面的导电缓冲层和薄膜层，所述导电缓冲层为镧锶钴氧，薄膜层为锰掺杂铌铟酸铅‑铌镁酸铅‑钛酸铅(简写为Mn‑PIN‑PMN‑PT)，化学组成为zMn‑(1‑x‑y)Pb(In1/2Nb1/2)O3‑yPb(Mg1/3Nb2/3)O3‑xPbTiO3，其中，x＝0.20～0.40，y＝0.20～0.50，z＝0.003～0.01。与现有技术相比，本发明制备的薄膜具有优良的铁电、压电、热释电性能，适用于新型的压电、热释电集成器件。
High curie point silicon substrate ferroelectric film material and preparation and application thereof
The invention relates to a high curie point silicon substrate ferroelectric film material and preparation and application thereof. The ferroelectric film material comprises a Pt/Ti/SiO2/Si substrate, a conductive buffer layer and a film layer, wherein the conductive buffer layer and the film layer are sequentially deposited on the surface of the substrate from inside to outside, the conductive buffer layer is lanthanum strontium cobalt oxide, and the thin film layer is manganese-doped lead indium niobate-lead magnesium niobate-lead titanate (abbreviated as Mn-PIN-PMN-PT), the chemical composition of the thin film layer is zMn-(1-x-y) Pb (In1/2Nb1/2) O3-yPb (Mg1/3Nb2/3) O3-xPbTiO3, x is equal to 0.20-0.40, y is equal to 0.20-0.50, and z is equal to 0.003-0.01. Compared with the prior art, the prepared film has excellent ferroelectric, piezoelectric and pyroelectric properties, and is suitable for novel piezoelectric and pyroelectric integrated devices.
本发明涉及一种高居里点硅衬底铁电薄膜材料及其制备与应用，所述铁电薄膜材料包括Pt/Ti/SiO2/Si衬底以及自内向外依次沉积在衬底表面的导电缓冲层和薄膜层，所述导电缓冲层为镧锶钴氧，薄膜层为锰掺杂铌铟酸铅‑铌镁酸铅‑钛酸铅(简写为Mn‑PIN‑PMN‑PT)，化学组成为zMn‑(1‑x‑y)Pb(In1/2Nb1/2)O3‑yPb(Mg1/3Nb2/3)O3‑xPbTiO3，其中，x＝0.20～0.40，y＝0.20～0.50，z＝0.003～0.01。与现有技术相比，本发明制备的薄膜具有优良的铁电、压电、热释电性能，适用于新型的压电、热释电集成器件。
High curie point silicon substrate ferroelectric film material and preparation and application thereof
一种高居里点硅衬底铁电薄膜材料及其制备与应用
WANG FEIFEI (Autor:in) / WANG JIASHENG (Autor:in) / LI ZIHAO (Autor:in) / ZHAO XIANGYONG (Autor:in) / WANG TAO (Autor:in) / TANG YANXUE (Autor:in) / DUAN ZHIHUA (Autor:in) / SHI WANGZHOU (Autor:in)
06.08.2021
Patent
Elektronische Ressource
Chinesisch
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