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Preparation method of porous silicon carbide raw material
The invention discloses a preparation method of a porous silicon carbide raw material and belongs to the technical field of porous silicon carbide material preparation. The technical problem to be solved by the invention is to improve the porosity of the porous silicon carbide raw material. The preparation method comprises the following steps: weighing silicon carbide, putting the silicon carbide into a ball milling tank, then putting tungsten steel grinding balls of which the mass is 0.5 time that of the silicon carbide into the ball milling tank, sieving the silicon carbide subjected to ball milling by using a sieve, weighing 25-30 parts by weight of sieved silicon carbide powder, 8-10 parts by weight of graphite, 3-5 parts by weight of water glass and 45-55 parts by weight of deionized water respectively, adding the weighed sieved silicon carbide powder into the deionized water, adding graphite after stirring, adding water glass, stirring for a certain time to obtain a mixed slurry, injecting the mixed slurry into a mold, drying at room temperature for 24-30 hours, demolding to obtain a blank, placing the blank into a resistance furnace, heating to 1800 DEG C, keeping for 3-4 hours, and cooling along with the furnace to obtain the porous silicon carbide raw material. The raw material porosity is 45-55%.
一种多孔碳化硅原料的制备方法,它属于多孔碳化硅材料制备技术领域。本发明要解决的技术问题为改善多孔碳化硅原料的孔隙率。本发明称量碳化硅放入球磨罐中,然后放入0.5倍质量的钨钢磨球,进行球磨后的碳化硅用筛子筛分,按照重量份数分别称量25‑30份的筛分后的碳化硅粉料、8‑10份的石墨、3‑5份的水玻璃、45‑55份的去离子水,称量好的筛分后的碳化硅粉料加入去离子水,搅拌后再加入石墨,然后再加入水玻璃,搅拌一定时间后,得到混合浆料注入模具中,然后在室温下进行干燥24‑30h,脱模后得到胚体置于电阻炉中升温至1800℃,保持3‑4h,随后随炉冷却得到一种多孔碳化硅原料。本发明原料孔隙率为45‑55%。
Preparation method of porous silicon carbide raw material
The invention discloses a preparation method of a porous silicon carbide raw material and belongs to the technical field of porous silicon carbide material preparation. The technical problem to be solved by the invention is to improve the porosity of the porous silicon carbide raw material. The preparation method comprises the following steps: weighing silicon carbide, putting the silicon carbide into a ball milling tank, then putting tungsten steel grinding balls of which the mass is 0.5 time that of the silicon carbide into the ball milling tank, sieving the silicon carbide subjected to ball milling by using a sieve, weighing 25-30 parts by weight of sieved silicon carbide powder, 8-10 parts by weight of graphite, 3-5 parts by weight of water glass and 45-55 parts by weight of deionized water respectively, adding the weighed sieved silicon carbide powder into the deionized water, adding graphite after stirring, adding water glass, stirring for a certain time to obtain a mixed slurry, injecting the mixed slurry into a mold, drying at room temperature for 24-30 hours, demolding to obtain a blank, placing the blank into a resistance furnace, heating to 1800 DEG C, keeping for 3-4 hours, and cooling along with the furnace to obtain the porous silicon carbide raw material. The raw material porosity is 45-55%.
一种多孔碳化硅原料的制备方法,它属于多孔碳化硅材料制备技术领域。本发明要解决的技术问题为改善多孔碳化硅原料的孔隙率。本发明称量碳化硅放入球磨罐中,然后放入0.5倍质量的钨钢磨球,进行球磨后的碳化硅用筛子筛分,按照重量份数分别称量25‑30份的筛分后的碳化硅粉料、8‑10份的石墨、3‑5份的水玻璃、45‑55份的去离子水,称量好的筛分后的碳化硅粉料加入去离子水,搅拌后再加入石墨,然后再加入水玻璃,搅拌一定时间后,得到混合浆料注入模具中,然后在室温下进行干燥24‑30h,脱模后得到胚体置于电阻炉中升温至1800℃,保持3‑4h,随后随炉冷却得到一种多孔碳化硅原料。本发明原料孔隙率为45‑55%。
Preparation method of porous silicon carbide raw material
一种多孔碳化硅原料的制备方法
17.08.2021
Patent
Elektronische Ressource
Chinesisch
IPC:
C04B
Kalk
,
LIME
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