Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Graphite plate as well as preparation method and application thereof
The invention discloses a graphite plate as well as a preparation method and application thereof, relates to the field of low-pressure MOCVD (Metal Organic Chemical Vapor Deposition) epitaxial growth, and in particular relates to a novel method for reducing pre-reaction. A layer of modified film is arranged on the surface layer of the graphite plate, and the thermal radiation coefficient of the modified film is lower than 0.2 W/(kg.K). According to the invention, the graphite plate is modified, so that the gas temperature of the area where the pre-reaction area is located is reduced, and the effect of retarding the pre-reaction is achieved.
本发明公开了一种石墨盘及其制备方法和应用，涉及低压MOCVD(石墨盘)外延生长领域，尤其涉及一种减少预反应的新方法。本发明所述石墨盘的表层有一层改性薄膜，所述改性薄膜热辐射系数低于0.2W/(kg·K)。本发明通过对石墨盘进行改性，降低了预反应区所在区域的气体温度，从而达到减缓预反应发生的效果。
Graphite plate as well as preparation method and application thereof
The invention discloses a graphite plate as well as a preparation method and application thereof, relates to the field of low-pressure MOCVD (Metal Organic Chemical Vapor Deposition) epitaxial growth, and in particular relates to a novel method for reducing pre-reaction. A layer of modified film is arranged on the surface layer of the graphite plate, and the thermal radiation coefficient of the modified film is lower than 0.2 W/(kg.K). According to the invention, the graphite plate is modified, so that the gas temperature of the area where the pre-reaction area is located is reduced, and the effect of retarding the pre-reaction is achieved.
本发明公开了一种石墨盘及其制备方法和应用，涉及低压MOCVD(石墨盘)外延生长领域，尤其涉及一种减少预反应的新方法。本发明所述石墨盘的表层有一层改性薄膜，所述改性薄膜热辐射系数低于0.2W/(kg·K)。本发明通过对石墨盘进行改性，降低了预反应区所在区域的气体温度，从而达到减缓预反应发生的效果。
Graphite plate as well as preparation method and application thereof
一种石墨盘及其制备方法和应用
LIU HENGCHANG ( Autor:in ) / WANG SHUO ( Autor:in ) / GAO XILONG ( Autor:in ) / LIU XUEZHEN ( Autor:in ) / HUANG SHANSHAN ( Autor:in ) / HUANG HUILIAN ( Autor:in ) / ZHOU WEIXIU ( Autor:in )
20.08.2021
Patent
Elektronische Ressource
Chinesisch
IPC:
C04B
Kalk
,
LIME
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