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POLYCRYSTALLINE CUBIC BORON NITRIDE AND PRODUCTION METHOD THEREFOR
Polycrystalline cubic boron nitride containing at least 98.5 vol% cubic boron nitride, wherein the dislocation density of the cubic boron nitride is greater than 8*10<15>/m<2>, the polycrystalline cubic boron nitride includes multiple crystal grains, and the median diameter d50 of the equivalent circle diameters of the multiple crystal grains is 0.1-0.5 [mu]m, inclusive.
一种立方晶氮化硼多晶体,其是含有98.5体积%以上的立方晶氮化硼的立方晶氮化硼多晶体,其中,所述立方晶氮化硼的位错密度大于8×1015/m2,所述立方晶氮化硼多晶体含有多个晶粒,所述多个晶粒的当量圆直径的中值粒径d50为0.1μm以上0.5μm以下。
POLYCRYSTALLINE CUBIC BORON NITRIDE AND PRODUCTION METHOD THEREFOR
Polycrystalline cubic boron nitride containing at least 98.5 vol% cubic boron nitride, wherein the dislocation density of the cubic boron nitride is greater than 8*10<15>/m<2>, the polycrystalline cubic boron nitride includes multiple crystal grains, and the median diameter d50 of the equivalent circle diameters of the multiple crystal grains is 0.1-0.5 [mu]m, inclusive.
一种立方晶氮化硼多晶体,其是含有98.5体积%以上的立方晶氮化硼的立方晶氮化硼多晶体,其中,所述立方晶氮化硼的位错密度大于8×1015/m2,所述立方晶氮化硼多晶体含有多个晶粒,所述多个晶粒的当量圆直径的中值粒径d50为0.1μm以上0.5μm以下。
POLYCRYSTALLINE CUBIC BORON NITRIDE AND PRODUCTION METHOD THEREFOR
立方晶氮化硼多晶体及其制造方法
MATSUKAWA RINKO (Autor:in) / KUKINO SATORU (Autor:in) / HIGASHI TAISUKE (Autor:in) / ABE MACHIKO (Autor:in)
31.08.2021
Patent
Elektronische Ressource
Chinesisch
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