A platform for research: civil engineering, architecture and urbanism
POLYCRYSTALLINE CUBIC BORON NITRIDE AND PRODUCTION METHOD THEREFOR
Polycrystalline cubic boron nitride containing at least 98.5 vol% cubic boron nitride, wherein the dislocation density of the cubic boron nitride is greater than 8*10<15>/m<2>, the polycrystalline cubic boron nitride includes multiple crystal grains, and the median diameter d50 of the equivalent circle diameters of the multiple crystal grains is 0.1-0.5 [mu]m, inclusive.
一种立方晶氮化硼多晶体,其是含有98.5体积%以上的立方晶氮化硼的立方晶氮化硼多晶体,其中,所述立方晶氮化硼的位错密度大于8×1015/m2,所述立方晶氮化硼多晶体含有多个晶粒,所述多个晶粒的当量圆直径的中值粒径d50为0.1μm以上0.5μm以下。
POLYCRYSTALLINE CUBIC BORON NITRIDE AND PRODUCTION METHOD THEREFOR
Polycrystalline cubic boron nitride containing at least 98.5 vol% cubic boron nitride, wherein the dislocation density of the cubic boron nitride is greater than 8*10<15>/m<2>, the polycrystalline cubic boron nitride includes multiple crystal grains, and the median diameter d50 of the equivalent circle diameters of the multiple crystal grains is 0.1-0.5 [mu]m, inclusive.
一种立方晶氮化硼多晶体,其是含有98.5体积%以上的立方晶氮化硼的立方晶氮化硼多晶体,其中,所述立方晶氮化硼的位错密度大于8×1015/m2,所述立方晶氮化硼多晶体含有多个晶粒,所述多个晶粒的当量圆直径的中值粒径d50为0.1μm以上0.5μm以下。
POLYCRYSTALLINE CUBIC BORON NITRIDE AND PRODUCTION METHOD THEREFOR
立方晶氮化硼多晶体及其制造方法
MATSUKAWA RINKO (author) / KUKINO SATORU (author) / HIGASHI TAISUKE (author) / ABE MACHIKO (author)
2021-08-31
Patent
Electronic Resource
Chinese
POLYCRYSTALLINE CUBIC BORON NITRIDE AND PRODUCTION METHOD THEREFOR
European Patent Office | 2020
|POLYCRYSTALLINE CUBIC BORON NITRIDE AND PRODUCTION METHOD THEREFOR
European Patent Office | 2020
|POLYCRYSTALLINE CUBIC BORON NITRIDE AND PRODUCTION METHOD THEREFOR
European Patent Office | 2020
|POLYCRYSTALLINE CUBIC BORON NITRIDE AND PRODUCTION METHOD THEREFOR
European Patent Office | 2022
|POLYCRYSTALLINE CUBIC BORON NITRIDE AND PRODUCTION METHOD THEREFOR
European Patent Office | 2020
|