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Method for preparing ZnO ceramic based on discharge plasma assisted cold sintering
The invention discloses a method for preparing ZnO ceramic based on discharge plasma assisted cold sintering, the method comprises the following steps: adopting analytically pure 99.5% ZnO powder, mixing an acetic acid solution with the concentration of 2mol/L and the addition ratio of 10wt% with the ZnO powder, fully and uniformly grinding, pouring into a graphite mold, applying 3.8-50MPa pressure, maintaining the pressure for 5min, heating to 120-300 DEG C at the rate of 50 DEG C/min in a vacuum environment, and keeping the temperature for 5min. The high-density ZnO ceramic is obtained in a discharge plasma assisted cold sintering mode, the relative density is higher than 98%, the grain growth activation energy of the ZnO ceramic is only 78.8 kJ/mol and is about one third of that of traditional high-temperature sintering, the sintering energy consumption is reduced to 0.11 MJ from 78.76 MJ of traditional sintering, the grain boundary impedance is reduced along with the increase of the sintering temperature, and 9.82 * 10 < 6 > omega of the sintered sample at 120 DEG C is reduced to 2.75 * 10 < 3 > omega of the sintered sample at 250 DEG C.
本发明公开了一种基于放电等离子体辅助冷烧结制备ZnO陶瓷的方法，该方法采用分析纯99.5％的ZnO粉末，取浓度为2mol/L，添加比～10wt％醋酸溶液与ZnO粉料进行混合，充分研磨均匀，倒入石墨模具，施加3.8‑50MPa压力，保压5min后，在真空环境下以50℃/min的速率升温加热至120‑300℃，保温5min。本发明采用放电等离子体辅助冷烧结的方式，得到高致密度的ZnO陶瓷，相对致密度高于98％，其晶粒生长活化能仅为78.8kJ/mol，约为传统高温烧结的三分之一，烧结耗能从传统烧结的78.76MJ降低到0.11MJ，晶界阻抗随烧结温度的升高而下降，从120℃烧结试样的9.82×106Ω下降到250℃烧结试样的2.75×103Ω。
Method for preparing ZnO ceramic based on discharge plasma assisted cold sintering
The invention discloses a method for preparing ZnO ceramic based on discharge plasma assisted cold sintering, the method comprises the following steps: adopting analytically pure 99.5% ZnO powder, mixing an acetic acid solution with the concentration of 2mol/L and the addition ratio of 10wt% with the ZnO powder, fully and uniformly grinding, pouring into a graphite mold, applying 3.8-50MPa pressure, maintaining the pressure for 5min, heating to 120-300 DEG C at the rate of 50 DEG C/min in a vacuum environment, and keeping the temperature for 5min. The high-density ZnO ceramic is obtained in a discharge plasma assisted cold sintering mode, the relative density is higher than 98%, the grain growth activation energy of the ZnO ceramic is only 78.8 kJ/mol and is about one third of that of traditional high-temperature sintering, the sintering energy consumption is reduced to 0.11 MJ from 78.76 MJ of traditional sintering, the grain boundary impedance is reduced along with the increase of the sintering temperature, and 9.82 * 10 < 6 > omega of the sintered sample at 120 DEG C is reduced to 2.75 * 10 < 3 > omega of the sintered sample at 250 DEG C.
本发明公开了一种基于放电等离子体辅助冷烧结制备ZnO陶瓷的方法，该方法采用分析纯99.5％的ZnO粉末，取浓度为2mol/L，添加比～10wt％醋酸溶液与ZnO粉料进行混合，充分研磨均匀，倒入石墨模具，施加3.8‑50MPa压力，保压5min后，在真空环境下以50℃/min的速率升温加热至120‑300℃，保温5min。本发明采用放电等离子体辅助冷烧结的方式，得到高致密度的ZnO陶瓷，相对致密度高于98％，其晶粒生长活化能仅为78.8kJ/mol，约为传统高温烧结的三分之一，烧结耗能从传统烧结的78.76MJ降低到0.11MJ，晶界阻抗随烧结温度的升高而下降，从120℃烧结试样的9.82×106Ω下降到250℃烧结试样的2.75×103Ω。
Method for preparing ZnO ceramic based on discharge plasma assisted cold sintering
一种基于放电等离子体辅助冷烧结制备ZnO陶瓷的方法
ZHAO XUETONG (Autor:in) / CHEN ZHILING (Autor:in) / LIANG JIE (Autor:in) / KANG SHENGLIN (Autor:in) / YANG LIJUN (Autor:in) / CHENG LI (Autor:in) / HAO JIAN (Autor:in) / LIAO RUIJIN (Autor:in) / LONG YULI (Autor:in) / ZENG QIAN (Autor:in)
07.09.2021
Patent
Elektronische Ressource
Chinesisch
IPC:
C04B
Kalk
,
LIME
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