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CERAMIC SUBSTATE WITH REACTION-BONDED SILICON CARBIDE HAVING DIAMOND PARTICLES
A composite material can include: a substrate of a first reaction-bonded silicon carbide (first RB-SiC) material; and a reaction-bonded diamond-retaining silicon carbide (RB-DSiC) layer bonded to a surface of the substrate. In some aspects, the RB-DSiC layer includes diamond particles bonded with a second reaction-bonded silicon carbide (second RB-SiC) material. The diamond particles may be homogeneously distributed through the second RB-SiC or only at the surface thereof. The diamond particles can be in an ordered pattern or un-ordered pattern. For example, a CMP conditioning disc can include the composite material of one of the embodiments.
本公开涉及一种复合材料,该复合材料可以包括第一反应烧结碳化硅(第一RB‑SiC)材料的衬底以及结合至该衬底的表面的反应烧结含金刚石碳化硅(RB‑DSiC)层。在一些方面,RB‑DSiC层包括与第二反应烧结碳化硅(第二RB‑SiC)材料结合的金刚石颗粒。金刚石颗粒可以均匀地分布在整个第二RB‑SiC中或仅分布在第二RB‑SiC的表面处。金刚石颗粒可以呈有序图案或无序图案。例如,CMP修整盘可以包括根据实施方式中的一个实施方式的复合材料。
CERAMIC SUBSTATE WITH REACTION-BONDED SILICON CARBIDE HAVING DIAMOND PARTICLES
A composite material can include: a substrate of a first reaction-bonded silicon carbide (first RB-SiC) material; and a reaction-bonded diamond-retaining silicon carbide (RB-DSiC) layer bonded to a surface of the substrate. In some aspects, the RB-DSiC layer includes diamond particles bonded with a second reaction-bonded silicon carbide (second RB-SiC) material. The diamond particles may be homogeneously distributed through the second RB-SiC or only at the surface thereof. The diamond particles can be in an ordered pattern or un-ordered pattern. For example, a CMP conditioning disc can include the composite material of one of the embodiments.
本公开涉及一种复合材料,该复合材料可以包括第一反应烧结碳化硅(第一RB‑SiC)材料的衬底以及结合至该衬底的表面的反应烧结含金刚石碳化硅(RB‑DSiC)层。在一些方面,RB‑DSiC层包括与第二反应烧结碳化硅(第二RB‑SiC)材料结合的金刚石颗粒。金刚石颗粒可以均匀地分布在整个第二RB‑SiC中或仅分布在第二RB‑SiC的表面处。金刚石颗粒可以呈有序图案或无序图案。例如,CMP修整盘可以包括根据实施方式中的一个实施方式的复合材料。
CERAMIC SUBSTATE WITH REACTION-BONDED SILICON CARBIDE HAVING DIAMOND PARTICLES
具有含金刚石颗粒的反应烧结碳化硅的陶瓷衬底
SALAMONE SAMUEL M (Autor:in) / EVANS GLEN JR (Autor:in)
29.10.2021
Patent
Elektronische Ressource
Chinesisch
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