Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
COMPOSITE STRUCTURE AND SEMICONDUCTOR MANUFACTURING APPARATUS INCLUDING THE SAME
The purpose of the present invention is to provide: a composite structure which can be used as a member for a semiconductor manufacturing device, said member being capable of improving low-particle generation; and a semiconductor manufacturing device which is provided with the composite structure. Specifically, the composite structure includes a base material and a structure provided on the base material and having a surface, the structure contains Y3Al5O12 as a main component, the indentation hardness of the composite structure is greater than 8.5 GPa, the particle resistance of the composite structure is relatively excellent, and the composite structure is preferably used as a member for a semiconductor manufacturing device.
本发明的目的在于提供一种作为可提高抗粒子性(low‑particle generation)的半导体制造装置用构件而加以使用的复合结构物以及具备其的半导体制造装置。具体而言，是包含基材和设置在所述基材上且具有表面的结构物的复合结构物，所述结构物作为主成分而含有Y3Al5O12，而且其压痕硬度大于8.5GPa的复合结构物的抗粒子性比较出色，作为半导体制造装置用构件而优选被使用。
COMPOSITE STRUCTURE AND SEMICONDUCTOR MANUFACTURING APPARATUS INCLUDING THE SAME
The purpose of the present invention is to provide: a composite structure which can be used as a member for a semiconductor manufacturing device, said member being capable of improving low-particle generation; and a semiconductor manufacturing device which is provided with the composite structure. Specifically, the composite structure includes a base material and a structure provided on the base material and having a surface, the structure contains Y3Al5O12 as a main component, the indentation hardness of the composite structure is greater than 8.5 GPa, the particle resistance of the composite structure is relatively excellent, and the composite structure is preferably used as a member for a semiconductor manufacturing device.
本发明的目的在于提供一种作为可提高抗粒子性(low‑particle generation)的半导体制造装置用构件而加以使用的复合结构物以及具备其的半导体制造装置。具体而言，是包含基材和设置在所述基材上且具有表面的结构物的复合结构物，所述结构物作为主成分而含有Y3Al5O12，而且其压痕硬度大于8.5GPa的复合结构物的抗粒子性比较出色，作为半导体制造装置用构件而优选被使用。
COMPOSITE STRUCTURE AND SEMICONDUCTOR MANUFACTURING APPARATUS INCLUDING THE SAME
复合结构物以及具备复合结构物的半导体制造装置
SERIZAWA HIROAKI (Autor:in) / RYOTO TAKIZAWA (Autor:in)
02.11.2021
Patent
Elektronische Ressource
Chinesisch
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