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High-strength zirconium oxide-aluminum oxide composite ceramic substrate applied to semiconductor device and manufacturing method thereof
The invention provides a high-strength zirconium oxide-aluminum oxide composite ceramic substrate applied to a semiconductor device, which is prepared by the following steps: carrying out ball milling, mixing and dispersing on three kinds of initial powder, namely aluminum oxide, zirconium oxide and a self-made synthetic additive in an organic solvent at room temperature; and preparing the composite ceramic substrate through the steps of slurry preparation, degassing, green body forming, punching, calculation, sintering and the like. The composite ceramic substrate has the thermoelectric properties that the three-point breaking strength is larger than 600 MPa, the mechanical property is excellent, the thermal conductivity is larger than 26 W/mK, the insulation characteristic is larger than 1014 omega.cm, and the surface leakage current (150 DEG C) is smaller than 200 nA.
本发明提出了一种应用于半导体装置的高强度氧化锆－氧化铝复合陶瓷基板，将氧化铝、氧化锆及自制合成的添加助剂三种起始粉体，在室温下，于有机溶剂中，进行球磨混合分散，再经调制浆料步骤、除气步骤、生胚成型步骤、冲片步骤、计算步骤及烧结步骤等步骤所制得，而具备优异三点抗折强度＞600MPa机械性能、热传导率＞26W/mK、绝缘特性＞1014Ω·cm与低表面漏电流(150℃)＜200nA等热电性质者。
High-strength zirconium oxide-aluminum oxide composite ceramic substrate applied to semiconductor device and manufacturing method thereof
The invention provides a high-strength zirconium oxide-aluminum oxide composite ceramic substrate applied to a semiconductor device, which is prepared by the following steps: carrying out ball milling, mixing and dispersing on three kinds of initial powder, namely aluminum oxide, zirconium oxide and a self-made synthetic additive in an organic solvent at room temperature; and preparing the composite ceramic substrate through the steps of slurry preparation, degassing, green body forming, punching, calculation, sintering and the like. The composite ceramic substrate has the thermoelectric properties that the three-point breaking strength is larger than 600 MPa, the mechanical property is excellent, the thermal conductivity is larger than 26 W/mK, the insulation characteristic is larger than 1014 omega.cm, and the surface leakage current (150 DEG C) is smaller than 200 nA.
本发明提出了一种应用于半导体装置的高强度氧化锆－氧化铝复合陶瓷基板，将氧化铝、氧化锆及自制合成的添加助剂三种起始粉体，在室温下，于有机溶剂中，进行球磨混合分散，再经调制浆料步骤、除气步骤、生胚成型步骤、冲片步骤、计算步骤及烧结步骤等步骤所制得，而具备优异三点抗折强度＞600MPa机械性能、热传导率＞26W/mK、绝缘特性＞1014Ω·cm与低表面漏电流(150℃)＜200nA等热电性质者。
High-strength zirconium oxide-aluminum oxide composite ceramic substrate applied to semiconductor device and manufacturing method thereof
应用于半导体装置的高强度氧化锆－氧化铝复合陶瓷基板及其制造方法
ZHU ZHIHONG (Autor:in) / WANG RUIKAI (Autor:in)
19.11.2021
Patent
Elektronische Ressource
Chinesisch
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