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High-entropy diboride-silicon carbide composite ceramic as well as preparation method and application thereof
The invention relates to the technical field of multiphase ceramics, in particular to a high-entropy diboride-silicon carbide multiphase ceramic as well as a preparation method and an application thereof. The composite ceramic comprises a mixture of the following molar components: 0-1 part of 5-9 transition metal carbides (titanium carbide, zirconium carbide, hafnium carbide, niobium carbide, tantalum carbide, vanadium carbide, chromium carbide, molybdenum carbide and tungsten carbide), 2.5-9 parts of boron carbide powder, 7.5-18 parts of silicon powder and 0-27 parts of silicon carbide powder, the density of the high-entropy diboride-silicon carbide composite ceramic is smaller than 5.3 g/cm<3>, the density is larger than or equal to 95%, and the Vickers hardness Hv5 is larger than or equal to 19 GPa; rapid in-situ synthesis preparation of the light, high-strength, high-hardness and high-entropy diboride-silicon carbide composite ceramic is achieved, the sintering temperature is low, and therefore the diboride-silicon carbide composite ceramic has wide application prospects in the fields of ultrahigh-temperature materials, superhard materials, ceramic cutters and the like.
本发明涉及复相陶瓷技术领域,具体涉及一种高熵二硼化物‑碳化硅复相陶瓷、制备方法及其应用;该复相陶瓷包括如下摩尔组分的混合料:过渡金属碳化物(碳化钛、碳化锆、碳化铪、碳化铌、碳化钽、碳化钒、碳化铬、碳化钼、碳化钨)中的5~9种,每种0~1份,碳化硼粉2.5~9份,硅粉7.5~18份,碳化硅粉0~27份;该高熵二硼化物‑碳化硅复相陶瓷密度<5.3g/cm3,致密度≥95%,维氏硬度Hv5≥19GPa;本发明实现了轻质、高强、高硬高熵二硼化物‑碳化硅复相陶瓷的快速原位自生制备,且烧结温度低,因而在超高温材料、超硬材料、陶瓷刀具等领域具有广泛的应用前景。
High-entropy diboride-silicon carbide composite ceramic as well as preparation method and application thereof
The invention relates to the technical field of multiphase ceramics, in particular to a high-entropy diboride-silicon carbide multiphase ceramic as well as a preparation method and an application thereof. The composite ceramic comprises a mixture of the following molar components: 0-1 part of 5-9 transition metal carbides (titanium carbide, zirconium carbide, hafnium carbide, niobium carbide, tantalum carbide, vanadium carbide, chromium carbide, molybdenum carbide and tungsten carbide), 2.5-9 parts of boron carbide powder, 7.5-18 parts of silicon powder and 0-27 parts of silicon carbide powder, the density of the high-entropy diboride-silicon carbide composite ceramic is smaller than 5.3 g/cm<3>, the density is larger than or equal to 95%, and the Vickers hardness Hv5 is larger than or equal to 19 GPa; rapid in-situ synthesis preparation of the light, high-strength, high-hardness and high-entropy diboride-silicon carbide composite ceramic is achieved, the sintering temperature is low, and therefore the diboride-silicon carbide composite ceramic has wide application prospects in the fields of ultrahigh-temperature materials, superhard materials, ceramic cutters and the like.
本发明涉及复相陶瓷技术领域,具体涉及一种高熵二硼化物‑碳化硅复相陶瓷、制备方法及其应用;该复相陶瓷包括如下摩尔组分的混合料:过渡金属碳化物(碳化钛、碳化锆、碳化铪、碳化铌、碳化钽、碳化钒、碳化铬、碳化钼、碳化钨)中的5~9种,每种0~1份,碳化硼粉2.5~9份,硅粉7.5~18份,碳化硅粉0~27份;该高熵二硼化物‑碳化硅复相陶瓷密度<5.3g/cm3,致密度≥95%,维氏硬度Hv5≥19GPa;本发明实现了轻质、高强、高硬高熵二硼化物‑碳化硅复相陶瓷的快速原位自生制备,且烧结温度低,因而在超高温材料、超硬材料、陶瓷刀具等领域具有广泛的应用前景。
High-entropy diboride-silicon carbide composite ceramic as well as preparation method and application thereof
一种高熵二硼化物-碳化硅复相陶瓷、制备方法及其应用
WANG DONG (Autor:in) / RAN SONGLIN (Autor:in) / DING XIANG (Autor:in) / JIN XING (Autor:in) / LI QINGGUI (Autor:in)
26.11.2021
Patent
Elektronische Ressource
Chinesisch
IPC:
C04B
Kalk
,
LIME
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