Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Binary eutectic target material and preparation method thereof
The invention discloses a binary eutectic target material and a preparation method thereof. The binary eutectic target material comprises a component A and a component B. The component A can be SiC or B4C, and the component B can be TiB2, ZrB2, HfB2, TaB2 or NbB2. The content of the initial component A is 30 mol%-90 mol%, and the balance is the component B. Compared with a multi-component target material prepared through solid-phase sintering, the eutectic target material prepared through the method is more compact, more in element variety, more uniform in phase dispersion, simpler in preparation process and higher in preparation efficiency. Compared with materials such as B, C, Si, SiC and B4C, the eutectic target material has good electric conductivity and thermal conductivity, and deposition cannot be affected by poor electric conductivity and thermal conductivity when the eutectic target material is used. The target material has high hardness and high toughness. When the target material prepared through the method is used for preparing a coating, reaction gas such as nitrogen and acetylene is not needed, and the prepared coating can have the same excellent performance as the target material. The target material can be used as an independent multi-component target material, and can also be used as a doped target material of a simple substance metal target.
本发明公开了一种二元共晶靶材及其制备方法，包括A组分与B组分，所述A组分可为SiC或B4C，B组分可为TiB2、ZrB2、HfB2、TaB2或NbB2，初始A组分含量为30mol％～90mol％，余量为B组分。相较于固相烧结制备的多组分靶材，本发明制备的共晶靶材更加致密，元素种类更多，相分散更均匀，制备过程更简单，制备效率更高；相较于B、C、Si、SiC、B4C等材料，本发明具有良好的导电导热性，使用时不会因导电性和导热性差影响沉积；靶材自身已具有高硬度、高韧性，使用本发明制备的靶材进行涂层制备时，无需氮气、乙炔等反应气体，可使制备的涂层具备靶材相同的优异性能。本发明既可作为单独的多组分靶材使用，也可作为单质金属靶的掺杂靶材进行使用。
Binary eutectic target material and preparation method thereof
The invention discloses a binary eutectic target material and a preparation method thereof. The binary eutectic target material comprises a component A and a component B. The component A can be SiC or B4C, and the component B can be TiB2, ZrB2, HfB2, TaB2 or NbB2. The content of the initial component A is 30 mol%-90 mol%, and the balance is the component B. Compared with a multi-component target material prepared through solid-phase sintering, the eutectic target material prepared through the method is more compact, more in element variety, more uniform in phase dispersion, simpler in preparation process and higher in preparation efficiency. Compared with materials such as B, C, Si, SiC and B4C, the eutectic target material has good electric conductivity and thermal conductivity, and deposition cannot be affected by poor electric conductivity and thermal conductivity when the eutectic target material is used. The target material has high hardness and high toughness. When the target material prepared through the method is used for preparing a coating, reaction gas such as nitrogen and acetylene is not needed, and the prepared coating can have the same excellent performance as the target material. The target material can be used as an independent multi-component target material, and can also be used as a doped target material of a simple substance metal target.
本发明公开了一种二元共晶靶材及其制备方法，包括A组分与B组分，所述A组分可为SiC或B4C，B组分可为TiB2、ZrB2、HfB2、TaB2或NbB2，初始A组分含量为30mol％～90mol％，余量为B组分。相较于固相烧结制备的多组分靶材，本发明制备的共晶靶材更加致密，元素种类更多，相分散更均匀，制备过程更简单，制备效率更高；相较于B、C、Si、SiC、B4C等材料，本发明具有良好的导电导热性，使用时不会因导电性和导热性差影响沉积；靶材自身已具有高硬度、高韧性，使用本发明制备的靶材进行涂层制备时，无需氮气、乙炔等反应气体，可使制备的涂层具备靶材相同的优异性能。本发明既可作为单独的多组分靶材使用，也可作为单质金属靶的掺杂靶材进行使用。
Binary eutectic target material and preparation method thereof
一种二元共晶靶材及其制备方法
TU RONG (Autor:in) / ZHANG SONG (Autor:in) / LI QIZHONG (Autor:in) / ZHANG LIANMENG (Autor:in)
30.11.2021
Patent
Elektronische Ressource
Chinesisch
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