Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Ternary eutectic target material and preparation method thereof
The invention discloses a ternary eutectic target material and a preparation method thereof. The ternary eutectic target material comprises powder of a component A, a component B and a component C, the content of the component A is 30-50 mol%, the content of the component B is 10-50 mol%, the content of the component C is 20-40 mol%, the component A is B4C powder, the component B is TiB2, ZrB2, HfB2, TaB2 or NbB2 powder, and the component C is SiC powder. The prepared eutectic target material has higher density, contains more element types and is more uniform in phase dispersion, four elements can be introduced through the single target material, the number of working target positions required during preparation of a multi-element coating can be reduced, and the power consumption of film coating and the cost of film coating equipment are reduced; the ternary eutectic target material has good electric conductivity and thermal conductivity, and can be used as a target material of a common physical vapor deposition technology; and meanwhile, the target material has high hardness and high toughness, and when the target material prepared through the method is used for preparing the coating, the prepared coating can have the same excellent performance as the target material without additionally adding reaction gas such as nitrogen and acetylene.
本发明公开了一种三元共晶靶材及其制备方法，包括A组分、B组分和C组分粉末，A组分含量为30～50mol％，B组分含量为10～50mol％，C组分含量为20～40mol％，所述A组分为B4C粉末，B组分为TiB2、ZrB2、HfB2、TaB2或NbB2粉末，C组分为SiC粉末。本发明制备的共晶靶材具有更高的致密度，含有更多的元素种类，相分散更均匀，单个靶材就可以引入四种元素，能够减少多元涂层制备时所需工作靶位的数量，降低了镀膜的功耗以及镀膜装备的成本；本发明三元共晶靶材具有良好的导电导热性，可作为常用物理气相沉积技术的靶材使用；同时，靶材自身已具有高硬度、高韧性，使用本发明制备的靶材进行涂层制备时，无需额外加入氮气、乙炔等反应气体，即可使制备的涂层具备与靶材相同的优异性能。
Ternary eutectic target material and preparation method thereof
The invention discloses a ternary eutectic target material and a preparation method thereof. The ternary eutectic target material comprises powder of a component A, a component B and a component C, the content of the component A is 30-50 mol%, the content of the component B is 10-50 mol%, the content of the component C is 20-40 mol%, the component A is B4C powder, the component B is TiB2, ZrB2, HfB2, TaB2 or NbB2 powder, and the component C is SiC powder. The prepared eutectic target material has higher density, contains more element types and is more uniform in phase dispersion, four elements can be introduced through the single target material, the number of working target positions required during preparation of a multi-element coating can be reduced, and the power consumption of film coating and the cost of film coating equipment are reduced; the ternary eutectic target material has good electric conductivity and thermal conductivity, and can be used as a target material of a common physical vapor deposition technology; and meanwhile, the target material has high hardness and high toughness, and when the target material prepared through the method is used for preparing the coating, the prepared coating can have the same excellent performance as the target material without additionally adding reaction gas such as nitrogen and acetylene.
本发明公开了一种三元共晶靶材及其制备方法，包括A组分、B组分和C组分粉末，A组分含量为30～50mol％，B组分含量为10～50mol％，C组分含量为20～40mol％，所述A组分为B4C粉末，B组分为TiB2、ZrB2、HfB2、TaB2或NbB2粉末，C组分为SiC粉末。本发明制备的共晶靶材具有更高的致密度，含有更多的元素种类，相分散更均匀，单个靶材就可以引入四种元素，能够减少多元涂层制备时所需工作靶位的数量，降低了镀膜的功耗以及镀膜装备的成本；本发明三元共晶靶材具有良好的导电导热性，可作为常用物理气相沉积技术的靶材使用；同时，靶材自身已具有高硬度、高韧性，使用本发明制备的靶材进行涂层制备时，无需额外加入氮气、乙炔等反应气体，即可使制备的涂层具备与靶材相同的优异性能。
Ternary eutectic target material and preparation method thereof
一种三元共晶靶材及其制备方法
TU RONG (Autor:in) / ZHANG SONG (Autor:in) / LI QIZHONG (Autor:in) / ZHANG LIANMENG (Autor:in)
30.11.2021
Patent
Elektronische Ressource
Chinesisch
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