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Microwave dielectric material with near-zero temperature coefficient of resonance frequency and preparation method thereof
The invention discloses a microwave dielectric material with a near-zero temperature coefficient of resonance frequency. Mg<2>TiO<4> and Li<2>TiO<3> are compounded according to a mass ratio of (1-x)Li<2>TiO<3-x>Mg<2>TiO<4> to finally form a three-phase composite system of Mg<2>TiO<4>, Li<2>MgTi<3>O<8> and Li<2>TiO<3>, the mass percent x of Mg<2>TiO<4> is more than 0 and less than 100%. According to the invention, Mg<2>TiO<4> and Li<2>TiO<3> are compounded, so that on one hand, the poor sintering performance of Mg<2>TiO<4> is improved, and the Mg<2>TiO<4> can be sintered and molded; and on the other hand, [tau]f compensation is carried out through Li<2>TiO<3> with a positive [tau]f value, so that the whole system has a near-zero [tau]f value, and the sintering temperature of the system can also be improved due to the relatively low sintering temperature of Li<2>TiO<3>.
本发明公开了一种谐振频率温度系数近零的微波介电材料,由Mg2TiO4和Li2TiO3按照(1‑x)Li2TiO3‑xMg2TiO4质量比复合,最终形成Mg2TiO4、Li2MgTi3O8和Li2TiO3三相复合体系,其中,所述Mg2TiO4的质量百分数x为:0<x<100%;本发明通过将Mg2TiO4与Li2TiO3进行复合,一方面改善了Mg2TiO4较差的烧结性能,使其能够烧结成型;另一方面通过具有正τf值的Li2TiO3进行τf补偿,使整个体系具有近零的τf值,且Li2TiO3较低的烧结温度也能改善体系的烧结温度。
Microwave dielectric material with near-zero temperature coefficient of resonance frequency and preparation method thereof
The invention discloses a microwave dielectric material with a near-zero temperature coefficient of resonance frequency. Mg<2>TiO<4> and Li<2>TiO<3> are compounded according to a mass ratio of (1-x)Li<2>TiO<3-x>Mg<2>TiO<4> to finally form a three-phase composite system of Mg<2>TiO<4>, Li<2>MgTi<3>O<8> and Li<2>TiO<3>, the mass percent x of Mg<2>TiO<4> is more than 0 and less than 100%. According to the invention, Mg<2>TiO<4> and Li<2>TiO<3> are compounded, so that on one hand, the poor sintering performance of Mg<2>TiO<4> is improved, and the Mg<2>TiO<4> can be sintered and molded; and on the other hand, [tau]f compensation is carried out through Li<2>TiO<3> with a positive [tau]f value, so that the whole system has a near-zero [tau]f value, and the sintering temperature of the system can also be improved due to the relatively low sintering temperature of Li<2>TiO<3>.
本发明公开了一种谐振频率温度系数近零的微波介电材料,由Mg2TiO4和Li2TiO3按照(1‑x)Li2TiO3‑xMg2TiO4质量比复合,最终形成Mg2TiO4、Li2MgTi3O8和Li2TiO3三相复合体系,其中,所述Mg2TiO4的质量百分数x为:0<x<100%;本发明通过将Mg2TiO4与Li2TiO3进行复合,一方面改善了Mg2TiO4较差的烧结性能,使其能够烧结成型;另一方面通过具有正τf值的Li2TiO3进行τf补偿,使整个体系具有近零的τf值,且Li2TiO3较低的烧结温度也能改善体系的烧结温度。
Microwave dielectric material with near-zero temperature coefficient of resonance frequency and preparation method thereof
一种谐振频率温度系数近零的微波介电材料及其制备方法
LAI YUANMING (Autor:in) / LI BAOYANG (Autor:in) / ZENG YIMING (Autor:in) / HAN JIAO (Autor:in) / JIANG GANG (Autor:in) / CHEN JIALIN (Autor:in) / HU CHANGYI (Autor:in)
11.02.2022
Patent
Elektronische Ressource
Chinesisch
IPC:
C04B
Kalk
,
LIME
Europäisches Patentamt | 2015
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