Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Target material preparation method and target material
The invention provides a target material preparation method and a target material. The target material preparation method comprises the following steps: grinding an indium oxide substrate and a tungsten oxide material through a ball mill to obtain a first-stage grinding slurry; subjecting the first-stage grinding slurry to sanding grinding to obtain second-stage grinding slurry; granulating the second-stage grinding slurry to obtain granules; performing cold isostatic pressing on the granules to obtain a biscuit; and sintering the biscuit, and conducting cooling to obtain the target material, wherein the pressure of cold isostatic pressing ranges from 280 Mpa to 320 Mpa, and the sintering temperature for sintering the biscuit ranges from 1460 DEG C to 1565 DEG C. The target material is prepared by adopting the target material preparation method, and the target material is high in density and good in component distribution uniformity, so the performance of a conductive oxide film prepared by using the target material is improved.
本发明提供了一种靶材制备方法和靶材，其中，靶材制备方法包括：将氧化铟基材和氧化钨材料通过球磨研磨，获取一段研磨浆料；对一段研磨浆料进行砂磨研磨，获取二段研磨浆料；对二段研磨浆料进行造粒，获取粒料；对粒料进行冷等静压，获取素坯；对素坯进行烧结，冷却后获取靶材；其中，冷等静压的压力为280Mpa至320Mpa，对素坯进行烧结的烧结温度为1460℃至1565℃。靶材采用上述的靶材制备方法制备而成，该靶材致密度高，且成分分布均匀性好，使得使用该靶材制备的导电氧化物薄膜性能得到提高。
Target material preparation method and target material
The invention provides a target material preparation method and a target material. The target material preparation method comprises the following steps: grinding an indium oxide substrate and a tungsten oxide material through a ball mill to obtain a first-stage grinding slurry; subjecting the first-stage grinding slurry to sanding grinding to obtain second-stage grinding slurry; granulating the second-stage grinding slurry to obtain granules; performing cold isostatic pressing on the granules to obtain a biscuit; and sintering the biscuit, and conducting cooling to obtain the target material, wherein the pressure of cold isostatic pressing ranges from 280 Mpa to 320 Mpa, and the sintering temperature for sintering the biscuit ranges from 1460 DEG C to 1565 DEG C. The target material is prepared by adopting the target material preparation method, and the target material is high in density and good in component distribution uniformity, so the performance of a conductive oxide film prepared by using the target material is improved.
本发明提供了一种靶材制备方法和靶材，其中，靶材制备方法包括：将氧化铟基材和氧化钨材料通过球磨研磨，获取一段研磨浆料；对一段研磨浆料进行砂磨研磨，获取二段研磨浆料；对二段研磨浆料进行造粒，获取粒料；对粒料进行冷等静压，获取素坯；对素坯进行烧结，冷却后获取靶材；其中，冷等静压的压力为280Mpa至320Mpa，对素坯进行烧结的烧结温度为1460℃至1565℃。靶材采用上述的靶材制备方法制备而成，该靶材致密度高，且成分分布均匀性好，使得使用该靶材制备的导电氧化物薄膜性能得到提高。
Target material preparation method and target material
靶材制备方法和靶材
LEI YU (Autor:in) / XU JIWEN (Autor:in) / ZHOU ZHIHONG (Autor:in) / XIAO SHIHONG (Autor:in) / ZHOU ZHAOYU (Autor:in) / YANG YONGTIAN (Autor:in)
18.02.2022
Patent
Elektronische Ressource
Chinesisch
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