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Copper ion doped calcium silicate microwave dielectric ceramic and preparation method thereof
The invention relates to the technical field of electronic ceramic materials, and provides a copper ion doped calcium silicate microwave dielectric ceramic and a preparation method thereof. Copper ions are doped in calcium silicate microwave dielectric ceramic, generation of impure phases in calcined powder can be inhibited by controlling the proper doping amount of the copper ions, pure-phase alpha-CaSiO3 powder (a triclinic system, and a space group is C1) is obtained, and then single-phase beta-CaSiO3 ceramic (a monoclinic system, and a space group is P21/a) is obtained through sintering. The obtained copper ion doped calcium silicate microwave dielectric ceramic is high in density and excellent in microwave dielectric property, and has a relatively high quality constant and a relatively low dielectric constant. Besides, by doping copper ions, the sintering temperature range of the ceramic is widened, the sintering temperature of a traditional solid-phase synthesis method is 1300 DEG C or above, while the sintering temperature of the preparation method provided by the invention is only 1050 DEG C or above, low-temperature co-firing can be realized, and actual production is facilitated.
本发明涉及电子陶瓷材料技术领域，提供了一种铜离子掺杂硅酸钙微波介质陶瓷及其制备方法。本发明在硅酸钙微波介质陶瓷中掺杂铜离子，通过控制合适的铜离子掺杂量，能够抑制煅烧粉中杂相的产生，获得纯相的α‑CaSiO3粉体(三斜晶系，空间群为C1)，进而通过烧结得到单相的β‑CaSiO3陶瓷(单斜晶系，空间群为P21/a)，所得铜离子掺杂硅酸钙微波介质陶瓷的致密度高、微波介电性能优异，具有较高的品质常数和较低的介电常数。另外，本发明通过掺杂铜离子，拓宽了陶瓷的烧结温度范围，传统的固相合成法烧结温度为1300℃以上，而本发明提供的制备方法烧结温度仅为1050℃以上，能够实现低温共烧，有利于实际生产。
Copper ion doped calcium silicate microwave dielectric ceramic and preparation method thereof
The invention relates to the technical field of electronic ceramic materials, and provides a copper ion doped calcium silicate microwave dielectric ceramic and a preparation method thereof. Copper ions are doped in calcium silicate microwave dielectric ceramic, generation of impure phases in calcined powder can be inhibited by controlling the proper doping amount of the copper ions, pure-phase alpha-CaSiO3 powder (a triclinic system, and a space group is C1) is obtained, and then single-phase beta-CaSiO3 ceramic (a monoclinic system, and a space group is P21/a) is obtained through sintering. The obtained copper ion doped calcium silicate microwave dielectric ceramic is high in density and excellent in microwave dielectric property, and has a relatively high quality constant and a relatively low dielectric constant. Besides, by doping copper ions, the sintering temperature range of the ceramic is widened, the sintering temperature of a traditional solid-phase synthesis method is 1300 DEG C or above, while the sintering temperature of the preparation method provided by the invention is only 1050 DEG C or above, low-temperature co-firing can be realized, and actual production is facilitated.
本发明涉及电子陶瓷材料技术领域，提供了一种铜离子掺杂硅酸钙微波介质陶瓷及其制备方法。本发明在硅酸钙微波介质陶瓷中掺杂铜离子，通过控制合适的铜离子掺杂量，能够抑制煅烧粉中杂相的产生，获得纯相的α‑CaSiO3粉体(三斜晶系，空间群为C1)，进而通过烧结得到单相的β‑CaSiO3陶瓷(单斜晶系，空间群为P21/a)，所得铜离子掺杂硅酸钙微波介质陶瓷的致密度高、微波介电性能优异，具有较高的品质常数和较低的介电常数。另外，本发明通过掺杂铜离子，拓宽了陶瓷的烧结温度范围，传统的固相合成法烧结温度为1300℃以上，而本发明提供的制备方法烧结温度仅为1050℃以上，能够实现低温共烧，有利于实际生产。
Copper ion doped calcium silicate microwave dielectric ceramic and preparation method thereof
一种铜离子掺杂硅酸钙微波介质陶瓷及其制备方法
ZENG YIMING (Autor:in) / WANG GANG (Autor:in) / LI MINGWEI (Autor:in) / HAN JIAO (Autor:in) / LIN ZEHUI (Autor:in) / HE JIAQI (Autor:in) / LI MENGHONG (Autor:in)
15.04.2022
Patent
Elektronische Ressource
Chinesisch
IPC:
C04B
Kalk
,
LIME
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