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METHOD FOR MANUFACTURING SILICON NITRIDE SUBSTRATES
The present invention relates to a method for manufacturing a silicon nitride substrate, and more particularly, to the method comprising the steps of: forming a slurry by mixing a silicon nitride powder, a ceramic additive, and a solvent; shaping the slurry to form a sheet; sandwiching at least one of the sheets between the lower plate and the upper plate to form a stacked structure; degreasing the stacked structure; and sintering the stacked structure. At least one of the lower plate and the upper plate includes a plurality of protrusions provided on one surface thereof, and the protrusions extend parallel to each other in one direction.
本发明涉及一种用于制造氮化硅基底的方法,并且更具体地,包括以下步骤:通过混合氮化硅粉末、陶瓷添加剂和溶剂来形成浆料;使浆料成型以形成片材;将片材中的至少一个夹在下板与上板之间以形成堆叠结构;将堆叠结构脱脂;以及烧结堆叠结构。下板和上板中的至少一个包括设置在其一个表面的多个突起,并且突起在一个方向上彼此平行地延伸。
METHOD FOR MANUFACTURING SILICON NITRIDE SUBSTRATES
The present invention relates to a method for manufacturing a silicon nitride substrate, and more particularly, to the method comprising the steps of: forming a slurry by mixing a silicon nitride powder, a ceramic additive, and a solvent; shaping the slurry to form a sheet; sandwiching at least one of the sheets between the lower plate and the upper plate to form a stacked structure; degreasing the stacked structure; and sintering the stacked structure. At least one of the lower plate and the upper plate includes a plurality of protrusions provided on one surface thereof, and the protrusions extend parallel to each other in one direction.
本发明涉及一种用于制造氮化硅基底的方法,并且更具体地,包括以下步骤:通过混合氮化硅粉末、陶瓷添加剂和溶剂来形成浆料;使浆料成型以形成片材;将片材中的至少一个夹在下板与上板之间以形成堆叠结构;将堆叠结构脱脂;以及烧结堆叠结构。下板和上板中的至少一个包括设置在其一个表面的多个突起,并且突起在一个方向上彼此平行地延伸。
METHOD FOR MANUFACTURING SILICON NITRIDE SUBSTRATES
用于制造氮化硅基底的方法
LEE SEUNG-YEON (Autor:in) / LEE SEUNG KWAN (Autor:in) / CHI EUN-OK (Autor:in)
29.04.2022
Patent
Elektronische Ressource
Chinesisch
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