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Magnetron sputtering ceramic target material and preparation method thereof
The invention discloses a magnetron sputtering ceramic target material and a preparation method, the ceramic target material is composed of zinc oxide, a dopant and a sintering aid, the content of the dopant is 0.7-2.5 wt%, and the content of the sintering aid is 0.08-0.15 wt%; the dopant is composed of zinc tungstate and/or zinc molybdate, and when the dopant is a mixture of the zinc tungstate and the zinc molybdate, the zinc tungstate accounts for 30-70 wt%; the sintering aid is a mixture of zinc borate, zinc silicate and zinc bismuthate, wherein the proportions of the zinc borate, the zinc silicate and the zinc bismuthate are 20-30wt%, 40-60wt% and 20-30wt% respectively. By adopting the ceramic target material provided by the invention for magnetron sputtering coating, a transparent conductive film with high carrier mobility can be obtained.
本发明公开了一种磁控溅射陶瓷靶材及制备方法,所述陶瓷靶材由氧化锌、掺杂物和助烧物组成,所述掺杂物含量占比为0.7‑2.5wt%,所述助烧物含量占比为0.08‑0.15wt%;所述掺杂物的组成为钨酸锌和/或钼酸锌,当掺杂物为钨酸锌和钼酸锌的混合物时,其中钨酸锌的占比为30‑70wt%;所述助烧物为硼酸锌、硅酸锌和铋酸锌的混合物,其中硼酸锌、硅酸锌和铋酸锌的占比分别为20‑30wt%、40‑60wt%和20‑30wt%。采用本发明提供的陶瓷靶材进行磁控溅射镀膜,可以获得高载流子迁移率的透明导电薄膜。
Magnetron sputtering ceramic target material and preparation method thereof
The invention discloses a magnetron sputtering ceramic target material and a preparation method, the ceramic target material is composed of zinc oxide, a dopant and a sintering aid, the content of the dopant is 0.7-2.5 wt%, and the content of the sintering aid is 0.08-0.15 wt%; the dopant is composed of zinc tungstate and/or zinc molybdate, and when the dopant is a mixture of the zinc tungstate and the zinc molybdate, the zinc tungstate accounts for 30-70 wt%; the sintering aid is a mixture of zinc borate, zinc silicate and zinc bismuthate, wherein the proportions of the zinc borate, the zinc silicate and the zinc bismuthate are 20-30wt%, 40-60wt% and 20-30wt% respectively. By adopting the ceramic target material provided by the invention for magnetron sputtering coating, a transparent conductive film with high carrier mobility can be obtained.
本发明公开了一种磁控溅射陶瓷靶材及制备方法,所述陶瓷靶材由氧化锌、掺杂物和助烧物组成,所述掺杂物含量占比为0.7‑2.5wt%,所述助烧物含量占比为0.08‑0.15wt%;所述掺杂物的组成为钨酸锌和/或钼酸锌,当掺杂物为钨酸锌和钼酸锌的混合物时,其中钨酸锌的占比为30‑70wt%;所述助烧物为硼酸锌、硅酸锌和铋酸锌的混合物,其中硼酸锌、硅酸锌和铋酸锌的占比分别为20‑30wt%、40‑60wt%和20‑30wt%。采用本发明提供的陶瓷靶材进行磁控溅射镀膜,可以获得高载流子迁移率的透明导电薄膜。
Magnetron sputtering ceramic target material and preparation method thereof
一种磁控溅射陶瓷靶材及制备方法
XU JIWEN (Autor:in) / YU CHENXU (Autor:in) / YANG LING (Autor:in) / WANG HUA (Autor:in) / ZHOU XIANJIE (Autor:in)
06.05.2022
Patent
Elektronische Ressource
Chinesisch
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