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Cylindrical sputtering target
This cylindrical sputtering target is provided with a metal cylindrical base material and a ceramic cylindrical target material that is joined to the outer peripheral side of the cylindrical base material and is integrally formed with the cylindrical base material at a length of 750 mm or more in the axial direction. The coefficient of variation in the axial direction of the volume resistivity of the outer peripheral surface of the cylindrical target is 0.05 or less.
本发明的圆筒型溅射靶具备金属制的圆筒型基材和陶瓷制的圆筒型靶材,所述陶瓷制的圆筒型靶材与所述圆筒型基材的外周侧接合,以750mm以上的轴线方向的长度一体形成,所述圆筒型靶材的外周面的体积电阻率的轴线方向的变异系数为0.05以下。
Cylindrical sputtering target
This cylindrical sputtering target is provided with a metal cylindrical base material and a ceramic cylindrical target material that is joined to the outer peripheral side of the cylindrical base material and is integrally formed with the cylindrical base material at a length of 750 mm or more in the axial direction. The coefficient of variation in the axial direction of the volume resistivity of the outer peripheral surface of the cylindrical target is 0.05 or less.
本发明的圆筒型溅射靶具备金属制的圆筒型基材和陶瓷制的圆筒型靶材,所述陶瓷制的圆筒型靶材与所述圆筒型基材的外周侧接合,以750mm以上的轴线方向的长度一体形成,所述圆筒型靶材的外周面的体积电阻率的轴线方向的变异系数为0.05以下。
Cylindrical sputtering target
圆筒型溅射靶
TSURUTA YOSHITAKA (Autor:in) / NEGISHI TOMOYA (Autor:in)
27.05.2022
Patent
Elektronische Ressource
Chinesisch
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