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Oxide sputtering target and method for producing oxide sputtering target
Provided is an oxide sputtering target comprising an oxide containing zirconium, silicon, and indium as metal components, the oxide having a zirconium oxide phase (11) having a maximum particle diameter of 10 [mu] m or less.
本发明提供一种氧化物溅射靶，其由氧化物构成，该氧化物含有锆、硅及铟作为金属成分，氧化锆相(11)的最大粒径为10μm以下。
Oxide sputtering target and method for producing oxide sputtering target
Provided is an oxide sputtering target comprising an oxide containing zirconium, silicon, and indium as metal components, the oxide having a zirconium oxide phase (11) having a maximum particle diameter of 10 [mu] m or less.
本发明提供一种氧化物溅射靶，其由氧化物构成，该氧化物含有锆、硅及铟作为金属成分，氧化锆相(11)的最大粒径为10μm以下。
Oxide sputtering target and method for producing oxide sputtering target
氧化物溅射靶及氧化物溅射靶的制造方法
MUTSUDA YUYA (Autor:in) / UMEMOTO KEITA (Autor:in)
10.06.2022
Patent
Elektronische Ressource
Chinesisch
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