Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Ferroelectric film, electronic component using same, and method for manufacturing ferroelectric film
The purpose of the present invention is to provide: a ferroelectric thin film which has very high ferroelectricity compared to conventional ferroelectric thin films comprising aluminum nitride to which scandium has been added, and which has practical stability; and an electronic component which uses the ferroelectric thin film. Provided are: a ferroelectric thin film represented by the chemical formula M11-XM2XN, in which M1 is Al or Ga, M2 is at least one element selected from the group consisting of Mg, Sc, and Nb, and X is in the range of 0-1; and an electronic element using the same.
本发明的目的在于提供一种与以往的由添加了钪的氮化铝构成的铁电性薄膜相比具有非常高的铁电性并且具有可耐受实用的稳定性的铁电性薄膜及使用其的电子元件。本发明提供由化学式M11‑XM2XN表示、M1为Al或Ga、M2为选自Mg、Sc和Nb中的至少1种元素、X为0以上且1以下的范围的铁电性薄膜和使用其的电子元件。
Ferroelectric film, electronic component using same, and method for manufacturing ferroelectric film
The purpose of the present invention is to provide: a ferroelectric thin film which has very high ferroelectricity compared to conventional ferroelectric thin films comprising aluminum nitride to which scandium has been added, and which has practical stability; and an electronic component which uses the ferroelectric thin film. Provided are: a ferroelectric thin film represented by the chemical formula M11-XM2XN, in which M1 is Al or Ga, M2 is at least one element selected from the group consisting of Mg, Sc, and Nb, and X is in the range of 0-1; and an electronic element using the same.
本发明的目的在于提供一种与以往的由添加了钪的氮化铝构成的铁电性薄膜相比具有非常高的铁电性并且具有可耐受实用的稳定性的铁电性薄膜及使用其的电子元件。本发明提供由化学式M11‑XM2XN表示、M1为Al或Ga、M2为选自Mg、Sc和Nb中的至少1种元素、X为0以上且1以下的范围的铁电性薄膜和使用其的电子元件。
Ferroelectric film, electronic component using same, and method for manufacturing ferroelectric film
铁电性薄膜、使用其的电子元件以及铁电性薄膜的制造方法
UEHARA MASATO (Autor:in) / AKIYAMA MORITO (Autor:in) / YAMADA HIROSHI (Autor:in) / FUNAKUBO HIROSHI (Autor:in) / SHIMIZU MASAO (Autor:in) / YASUOKA SHINNOSUKE (Autor:in)
12.08.2022
Patent
Elektronische Ressource
Chinesisch
IPC:
H01L
Halbleiterbauelemente
,
SEMICONDUCTOR DEVICES
/
C01B
NON-METALLIC ELEMENTS
,
Nichtmetallische Elemente
/
C01F
COMPOUNDS OF THE METALS BERYLLIUM, MAGNESIUM, ALUMINIUM, CALCIUM, STRONTIUM, BARIUM, RADIUM, THORIUM, OR OF THE RARE-EARTH METALS
,
Verbindungen der Metalle Beryllium, Magnesium, Aluminium, Calcium, Strontium, Barium, Radium, Thorium oder der Seltenen Erden
/
C01G
Verbindungen der von den Unterklassen C01D oder C01F nicht umfassten Metalle
,
COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
/
C04B
Kalk
,
LIME
/
C23C
Beschichten metallischer Werkstoffe
,
COATING METALLIC MATERIAL
/
C30B
SINGLE-CRYSTAL GROWTH
,
Züchten von Einkristallen
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