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Preparation method of PTFE-based high-frequency material with high dielectric constant
The invention discloses a preparation method of a PTFE-based high-frequency material with a high dielectric constant, and MgO2 and Nb2O3 are doped to carry out doping modification to obtain complex-phase BST ceramic powder which has an extremely high dielectric constant and extremely low dielectric loss. Wherein Mg < 2 + > can replace Ti < 4 + >, oxygen vacancies and titanium vacancies are effectively compensated, and dielectric loss is reduced while it is ensured that the dielectric strength is improved; nb < 3 + > can reduce lattice distortion, inhibit grain growth, effectively improve dielectric constant, reduce oxygen vacancy and effectively reduce dielectric loss. Although the dielectric constant of PTFE is relatively low, the dielectric damage of PTFE is the lowest in current organic matters, and meanwhile, PTFE has excellent thermal stability. The high-frequency substrate manufactured by taking the high-frequency substrate as a main body is extremely low in dielectric constant, extremely low in dielectric loss, resistant to high temperature and high humidity, extremely good in reliability and capable of always keeping the dielectric property stable under different temperature changes.
本发明公开了一种高介电常数的PTFE基高频材料的制备方法，通过掺杂MgO2、Nb2O3进行掺杂改性得到复相BST陶瓷粉体，有着极高的介电常数和极低的介电损耗。其中Mg2+可以置换出Ti4+，有效补偿氧空位与钛空位，确保了提升介电强度的同时，降低介电损耗；Nb3+可已降低晶格畸变，抑制晶粒增长，可以有效提升介电常数，同时降低了氧空位，有效降低介电损耗。而PTFE虽然介电常数较低，但是其介电损害也是目前有机物中最低的，同时其有着优良的热稳定性。二者性能优异，优劣互补，由其为主体制作的高频基板，介电常数极介电损耗极低，耐高温高湿，可靠性极好，在不同温度变化下，可以始终保持介电性能稳定。
Preparation method of PTFE-based high-frequency material with high dielectric constant
The invention discloses a preparation method of a PTFE-based high-frequency material with a high dielectric constant, and MgO2 and Nb2O3 are doped to carry out doping modification to obtain complex-phase BST ceramic powder which has an extremely high dielectric constant and extremely low dielectric loss. Wherein Mg < 2 + > can replace Ti < 4 + >, oxygen vacancies and titanium vacancies are effectively compensated, and dielectric loss is reduced while it is ensured that the dielectric strength is improved; nb < 3 + > can reduce lattice distortion, inhibit grain growth, effectively improve dielectric constant, reduce oxygen vacancy and effectively reduce dielectric loss. Although the dielectric constant of PTFE is relatively low, the dielectric damage of PTFE is the lowest in current organic matters, and meanwhile, PTFE has excellent thermal stability. The high-frequency substrate manufactured by taking the high-frequency substrate as a main body is extremely low in dielectric constant, extremely low in dielectric loss, resistant to high temperature and high humidity, extremely good in reliability and capable of always keeping the dielectric property stable under different temperature changes.
本发明公开了一种高介电常数的PTFE基高频材料的制备方法，通过掺杂MgO2、Nb2O3进行掺杂改性得到复相BST陶瓷粉体，有着极高的介电常数和极低的介电损耗。其中Mg2+可以置换出Ti4+，有效补偿氧空位与钛空位，确保了提升介电强度的同时，降低介电损耗；Nb3+可已降低晶格畸变，抑制晶粒增长，可以有效提升介电常数，同时降低了氧空位，有效降低介电损耗。而PTFE虽然介电常数较低，但是其介电损害也是目前有机物中最低的，同时其有着优良的热稳定性。二者性能优异，优劣互补，由其为主体制作的高频基板，介电常数极介电损耗极低，耐高温高湿，可靠性极好，在不同温度变化下，可以始终保持介电性能稳定。
Preparation method of PTFE-based high-frequency material with high dielectric constant
一种高介电常数的PTFE基高频材料的制备方法
LIANG XITING (Autor:in) / HOU YUAN (Autor:in) / JIANG JIANYONG (Autor:in) / HU PENGHAO (Autor:in)
09.12.2022
Patent
Elektronische Ressource
Chinesisch
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