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Low-temperature sintered microwave dielectric ceramic material as well as preparation method and application thereof
The invention discloses a low-temperature sintering microwave dielectric ceramic material, a preparation method of the low-temperature sintering microwave dielectric ceramic material and application of the low-temperature sintering microwave dielectric ceramic material in preparation of low-temperature co-fired ceramic with metal Ag as an electrode. The chemical general formula of the low-temperature sintering microwave dielectric ceramic material is Zn < 1.92 > Cu < 0.08 > GeO < 4-y > wt.% B2O3, and y is 0.25-1; the sintering temperature of the ceramic material is below 960 DEG C and meets the co-firing condition with a metal electrode Ag (the melting point is 961 DEG C), and the Zn < 1.92 > Cu < 0.08 > GeO4 + 0.5 wt.% B2O3 ceramic material shows good dielectric properties when co-fired with the silver electrode at 940 DEG C: epsilon r = 7.38, Q * f = 108500 GHz and tauf =-25.3 ppm/DEG C; after being overlapped with a conductive electrode, the material can be subjected to multi-layer co-firing to prepare a miniaturized, integrated, multi-adaptive, low-cost and large-scale electronic component; the chemical composition and the preparation process are simple, and can be used for industrial production.
本发明公开了一种低温烧结微波介质陶瓷材料、一种低温烧结微波介质陶瓷材料的制备方法以及低温烧结微波介质陶瓷材料在制备金属Ag作为电极的低温共烧陶瓷中的应用,本发明的低温烧结微波介质陶瓷材料化学通式为:Zn1.92Cu0.08GeO4‑y wt.%B2O3,其中y=0.25~1;本发明的陶瓷材料烧结温度均在960℃以下满足与金属电极Ag(熔点961℃)共烧条件,Zn1.92Cu0.08GeO4+0.5wt.%B2O3陶瓷材料在940℃下与银电极共烧表现出良好的介电性能:εr=7.38,Q×f=108500GHz和τf=‑25.3ppm/℃,可以与导电电极叠加后进行多层共烧制备出小型化、集成化、多适应性、低成本、规模化的电子元器件;其化学组成和制备工艺简单,可用于工业生产。
Low-temperature sintered microwave dielectric ceramic material as well as preparation method and application thereof
The invention discloses a low-temperature sintering microwave dielectric ceramic material, a preparation method of the low-temperature sintering microwave dielectric ceramic material and application of the low-temperature sintering microwave dielectric ceramic material in preparation of low-temperature co-fired ceramic with metal Ag as an electrode. The chemical general formula of the low-temperature sintering microwave dielectric ceramic material is Zn < 1.92 > Cu < 0.08 > GeO < 4-y > wt.% B2O3, and y is 0.25-1; the sintering temperature of the ceramic material is below 960 DEG C and meets the co-firing condition with a metal electrode Ag (the melting point is 961 DEG C), and the Zn < 1.92 > Cu < 0.08 > GeO4 + 0.5 wt.% B2O3 ceramic material shows good dielectric properties when co-fired with the silver electrode at 940 DEG C: epsilon r = 7.38, Q * f = 108500 GHz and tauf =-25.3 ppm/DEG C; after being overlapped with a conductive electrode, the material can be subjected to multi-layer co-firing to prepare a miniaturized, integrated, multi-adaptive, low-cost and large-scale electronic component; the chemical composition and the preparation process are simple, and can be used for industrial production.
本发明公开了一种低温烧结微波介质陶瓷材料、一种低温烧结微波介质陶瓷材料的制备方法以及低温烧结微波介质陶瓷材料在制备金属Ag作为电极的低温共烧陶瓷中的应用,本发明的低温烧结微波介质陶瓷材料化学通式为:Zn1.92Cu0.08GeO4‑y wt.%B2O3,其中y=0.25~1;本发明的陶瓷材料烧结温度均在960℃以下满足与金属电极Ag(熔点961℃)共烧条件,Zn1.92Cu0.08GeO4+0.5wt.%B2O3陶瓷材料在940℃下与银电极共烧表现出良好的介电性能:εr=7.38,Q×f=108500GHz和τf=‑25.3ppm/℃,可以与导电电极叠加后进行多层共烧制备出小型化、集成化、多适应性、低成本、规模化的电子元器件;其化学组成和制备工艺简单,可用于工业生产。
Low-temperature sintered microwave dielectric ceramic material as well as preparation method and application thereof
一种低温烧结微波介质陶瓷材料及其制备方法和应用
XING ZHUO (Autor:in) / WENG JUHAI (Autor:in) / MA CHI (Autor:in) / AHN HO-NAM (Autor:in)
20.01.2023
Patent
Elektronische Ressource
Chinesisch
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