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Underground anti-seepage film planting standard connector and film planting method
The invention provides an underground anti-seepage film planting standard connector and a film planting method.The film planting standard connector comprises a component and grouting expansion parts, the component is composed of two groove sections which share a back plate and are connected back to back, the grouting expansion parts are arranged in groove openings of the two groove sections respectively, and grouting holes are formed in the grouting expansion parts; when grout is injected into the grouting hole, the grouting expansion part expands to seal the notch. By the adoption of the technical scheme, the implanting efficiency of the water stop film during ultra-deep film implanting can be improved.
本发明提供了一种地下防渗的植膜标准接头及植膜方法,所述植膜标准接头包括由共用一个背板且背靠背连接的两个槽段组成的构件和分别设置于所述两个槽段的槽口内的注浆膨胀部件,所述注浆膨胀部件上设置有注浆孔,当向所述注浆孔注入浆液时,所述注浆膨胀部件膨胀,将所述槽口密封。采用本发明的技术方案,可以提高超深植膜时止水膜的植入效率。
Underground anti-seepage film planting standard connector and film planting method
The invention provides an underground anti-seepage film planting standard connector and a film planting method.The film planting standard connector comprises a component and grouting expansion parts, the component is composed of two groove sections which share a back plate and are connected back to back, the grouting expansion parts are arranged in groove openings of the two groove sections respectively, and grouting holes are formed in the grouting expansion parts; when grout is injected into the grouting hole, the grouting expansion part expands to seal the notch. By the adoption of the technical scheme, the implanting efficiency of the water stop film during ultra-deep film implanting can be improved.
本发明提供了一种地下防渗的植膜标准接头及植膜方法,所述植膜标准接头包括由共用一个背板且背靠背连接的两个槽段组成的构件和分别设置于所述两个槽段的槽口内的注浆膨胀部件,所述注浆膨胀部件上设置有注浆孔,当向所述注浆孔注入浆液时,所述注浆膨胀部件膨胀,将所述槽口密封。采用本发明的技术方案,可以提高超深植膜时止水膜的植入效率。
Underground anti-seepage film planting standard connector and film planting method
一种地下防渗的植膜标准接头及植膜方法
LOU RONGXIANG (Autor:in) / ZHOU ZHEN (Autor:in) / LIU CHUNLEI (Autor:in) / DU CE (Autor:in) / YE GUANBAO (Autor:in) / LI YAOLIANG (Autor:in) / GAO QINGQING (Autor:in)
20.01.2023
Patent
Elektronische Ressource
Chinesisch
IPC:
E02D
FOUNDATIONS
,
Gründungen
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