Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Method for in-situ growth of (0002) texture wurtzite aluminum nitride-based film on (111) texture aluminum bottom electrode and application of (0002) texture wurtzite aluminum nitride-based film
The invention provides a method and application for in-situ growth of a (0002) texture wurtzite aluminum nitride-based film on a (111) texture aluminum bottom electrode, the whole process is realized in the same chamber, the same Al metal target is adopted, the (111) texture Al metal bottom electrode is deposited on a substrate, and then in the same chamber, the (0002) texture wurtzite aluminum nitride-based film is deposited on the substrate. And in-situ continuous growth of the (111) texture Al bottom electrode thin film and the (0002) texture wurtzite AlN-based thin film is realized to obtain the thin film material. And preparing a top electrode based on the obtained thin film by adopting a thermal evaporation or sputtering method, and finally obtaining the metal-dielectric-metal structure capacitor. According to the method, the problems that in other traditional metal-dielectric-metal (MIM) structure device preparation technologies, the continuity of film growth is damaged in the sample transfer process, consumed time is long, and production efficiency is low are solved; the problems that the surface of the bottom electrode is easily polluted in the transfer process, pores and holes are formed between the bottom electrode and the AlN-based thin film, and the performance of the device becomes poor are solved; and the doping of different metal elements in the AlN-based thin film is also avoided.
本发明提供一种在(111)织构铝底电极上原位生长(0002)织构纤锌矿氮化铝基薄膜的方法和应用，整个过程在同一腔室实现，采用同一Al金属靶，在衬底上沉积(111)织构Al金属底电极，随后在同一腔室，实现(111)织构Al底电极薄膜和(0002)织构纤锌矿AlN基薄膜的原位连续生长得到薄膜材料。基于得到的薄膜采用热蒸发或溅射法制备顶电极，最终得到金属‑电介质‑金属结构电容器。本发明不仅解决了其他传统的金属‑电介质‑金属(MIM)结构器件制备技术中样品转移过程破坏了薄膜生长的连续性、耗时长，生产效率低问题；还解决了该转移过程易造成底电极表面污染，底电极与AlN基薄膜之间出现孔隙、空洞，导致器件的性能变差问题；也避免了AlN基薄膜内的异类金属元素掺杂。
Method for in-situ growth of (0002) texture wurtzite aluminum nitride-based film on (111) texture aluminum bottom electrode and application of (0002) texture wurtzite aluminum nitride-based film
The invention provides a method and application for in-situ growth of a (0002) texture wurtzite aluminum nitride-based film on a (111) texture aluminum bottom electrode, the whole process is realized in the same chamber, the same Al metal target is adopted, the (111) texture Al metal bottom electrode is deposited on a substrate, and then in the same chamber, the (0002) texture wurtzite aluminum nitride-based film is deposited on the substrate. And in-situ continuous growth of the (111) texture Al bottom electrode thin film and the (0002) texture wurtzite AlN-based thin film is realized to obtain the thin film material. And preparing a top electrode based on the obtained thin film by adopting a thermal evaporation or sputtering method, and finally obtaining the metal-dielectric-metal structure capacitor. According to the method, the problems that in other traditional metal-dielectric-metal (MIM) structure device preparation technologies, the continuity of film growth is damaged in the sample transfer process, consumed time is long, and production efficiency is low are solved; the problems that the surface of the bottom electrode is easily polluted in the transfer process, pores and holes are formed between the bottom electrode and the AlN-based thin film, and the performance of the device becomes poor are solved; and the doping of different metal elements in the AlN-based thin film is also avoided.
本发明提供一种在(111)织构铝底电极上原位生长(0002)织构纤锌矿氮化铝基薄膜的方法和应用，整个过程在同一腔室实现，采用同一Al金属靶，在衬底上沉积(111)织构Al金属底电极，随后在同一腔室，实现(111)织构Al底电极薄膜和(0002)织构纤锌矿AlN基薄膜的原位连续生长得到薄膜材料。基于得到的薄膜采用热蒸发或溅射法制备顶电极，最终得到金属‑电介质‑金属结构电容器。本发明不仅解决了其他传统的金属‑电介质‑金属(MIM)结构器件制备技术中样品转移过程破坏了薄膜生长的连续性、耗时长，生产效率低问题；还解决了该转移过程易造成底电极表面污染，底电极与AlN基薄膜之间出现孔隙、空洞，导致器件的性能变差问题；也避免了AlN基薄膜内的异类金属元素掺杂。
Method for in-situ growth of (0002) texture wurtzite aluminum nitride-based film on (111) texture aluminum bottom electrode and application of (0002) texture wurtzite aluminum nitride-based film
在(111)织构铝底电极上原位生长(0002)织构纤锌矿氮化铝基薄膜的方法和应用
03.02.2023
Patent
Elektronische Ressource
Chinesisch
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