ALUMINUM NITRIDE FILM, METHOD FOR MANUFACTURING ALUMINUM NITRIDE FILM, AND HIGH-BREAKDOWN-VOLTAGE COMPONENT: Fid-Bau Portal

ALUMINUM NITRIDE FILM, METHOD FOR MANUFACTURING ALUMINUM NITRIDE FILM, AND HIGH-BREAKDOWN-VOLTAGE COMPONENT

YUMOTO ATSUSHI / SHIMIZU MARI / INOUE TETSUO / HINO TAKASHI / SAITO SHUICHI

An aluminum nitride film according to the present invention includes polycrystalline aluminum nitride. The dielectric strength voltage of the aluminum nitride film is at least 100 kV/mm.

Un film de nitrure d'aluminium selon la présente invention comprend du nitrure d'aluminium polycristallin. La tension de résistance diélectrique du film de nitrure d'aluminium est d'au moins 100 kV/mm.

窒化アルミニウム膜は、多結晶の窒化アルミニウムを含む。窒化アルミニウム膜の絶縁耐圧は１００ｋＶ／ｍｍ以上である。

Zugriff

Download

Seitennavigation

Dokumentinformationen

Ähnliche Titel

Exportieren, teilen und zitieren

ALUMINUM NITRIDE FILM, METHOD FOR MANUFACTURING ALUMINUM NITRIDE FILM, AND HIGH-BREAKDOWN-VOLTAGE COMPONENT

YUMOTO ATSUSHI / SHIMIZU MARI / INOUE TETSUO / HINO TAKASHI / SAITO SHUICHI

Abstract

An aluminum nitride film according to the present invention includes polycrystalline aluminum nitride. The dielectric strength voltage of the aluminum nitride film is at least 100 kV/mm.

窒化アルミニウム膜は、多結晶の窒化アルミニウムを含む。窒化アルミニウム膜の絶縁耐圧は１００ｋＶ／ｍｍ以上である。

ALUMINUM NITRIDE FILM, METHOD FOR MANUFACTURING ALUMINUM NITRIDE FILM, AND HIGH-BREAKDOWN-VOLTAGE COMPONENT

YUMOTO ATSUSHI / SHIMIZU MARI / INOUE TETSUO / HINO TAKASHI / SAITO SHUICHI

Abstract

An aluminum nitride film according to the present invention includes polycrystalline aluminum nitride. The dielectric strength voltage of the aluminum nitride film is at least 100 kV/mm.

窒化アルミニウム膜は、多結晶の窒化アルミニウムを含む。窒化アルミニウム膜の絶縁耐圧は１００ｋＶ／ｍｍ以上である。

Zugriff

Download

Seitennavigation

Dokumentinformationen

Ähnliche Titel

Exportieren, teilen und zitieren

Dokumentinformationen

Titel:

ALUMINUM NITRIDE FILM, METHOD FOR MANUFACTURING ALUMINUM NITRIDE FILM, AND HIGH-BREAKDOWN-VOLTAGE COMPONENT

Weitere Titelangaben:

FILM DE NITRURE D'ALUMINIUM, PROCÉDÉ DE FABRICATION DE FILM DE NITRURE D'ALUMINIUM ET COMPOSANT À TENSION DE CLAQUAGE ÉLEVÉE
窒化アルミニウム膜、窒化アルミニウム膜の製造方法、および高耐圧部品

Beteiligte:

YUMOTO ATSUSHI ( Autor:in ) / SHIMIZU MARI ( Autor:in ) / INOUE TETSUO ( Autor:in ) / HINO TAKASHI ( Autor:in ) / SAITO SHUICHI ( Autor:in )

Erscheinungsdatum:

14.09.2017

Medientyp:

Patent

Format:

Elektronische Ressource

Sprache:

Japanisch

Klassifikation:

IPC: H01L Halbleiterbauelemente , SEMICONDUCTOR DEVICES / C04B Kalk , LIME / C23C Beschichten metallischer Werkstoffe , COATING METALLIC MATERIAL