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Tantalum-magnesium-lanthanum modified bismuth ferrite-based dielectric energy storage material and preparation method thereof
The invention belongs to the technical field of dielectric materials, and particularly relates to a tantalum-magnesium-lanthanum modified bismuth ferrite-based dielectric energy storage material and a preparation method thereof.The preparation method comprises the steps that 1, materials are prepared, specifically, bismuth oxide, iron oxide, barium carbonate, titanium oxide, lanthanum oxide, magnesium oxide and tantalum oxide are mixed, and a mixture is obtained; step 2, material mixing: adding absolute ethyl alcohol with the same amount as the mixture into the mixture, and continuously carrying out ball milling for 1 hour, so that the powder is uniformly mixed to form slurry; step 3, drying, namely drying the slurry in a drying oven at the temperature of 80 DEG C at a constant temperature to obtain uniformly mixed powder; step 4, solid-phase reaction: putting the uniformly mixed powder into a mold, carrying out compression molding for 3 minutes under 150MPa, putting a molded block into a solid-phase reaction furnace, and carrying out heat preservation for 3 hours at 800 DEG C to carry out solid-phase reaction; and 5, ball milling, forming and sintering. The structure is reasonable, and the lead-free energy storage ceramic with better performance can be prepared to meet the development trend of miniaturization and high integration level of electronic products.
本发明属于电介质材料技术领域，具体为一种钽镁镧改性铁酸铋基电介质储能材料及制备方法，包括步骤1：配料，将氧化铋、氧化铁、碳酸钡、氧化钛、氧化镧、氧化镁和氧化钽混合，得到混合物；步骤2：混料，向混合物中加入与混合物等量的无水乙醇，持续球磨1小时，使粉体混合均匀形成浆料；步骤3：烘干，把浆料置于80℃烘箱内恒温干燥，获得混合均匀的粉料；步骤4：固相反应，将混合均匀的粉料置于模具中150MPa下压制成型3分钟，将成型块体置于固相反应炉中在800℃下保温3小时发生固相反应；步骤5：球磨、成型和烧结。其结构合理，能够制备具有更优性能的无铅储能陶瓷来满足电子产品小型化和高集成度的发展趋势。
Tantalum-magnesium-lanthanum modified bismuth ferrite-based dielectric energy storage material and preparation method thereof
The invention belongs to the technical field of dielectric materials, and particularly relates to a tantalum-magnesium-lanthanum modified bismuth ferrite-based dielectric energy storage material and a preparation method thereof.The preparation method comprises the steps that 1, materials are prepared, specifically, bismuth oxide, iron oxide, barium carbonate, titanium oxide, lanthanum oxide, magnesium oxide and tantalum oxide are mixed, and a mixture is obtained; step 2, material mixing: adding absolute ethyl alcohol with the same amount as the mixture into the mixture, and continuously carrying out ball milling for 1 hour, so that the powder is uniformly mixed to form slurry; step 3, drying, namely drying the slurry in a drying oven at the temperature of 80 DEG C at a constant temperature to obtain uniformly mixed powder; step 4, solid-phase reaction: putting the uniformly mixed powder into a mold, carrying out compression molding for 3 minutes under 150MPa, putting a molded block into a solid-phase reaction furnace, and carrying out heat preservation for 3 hours at 800 DEG C to carry out solid-phase reaction; and 5, ball milling, forming and sintering. The structure is reasonable, and the lead-free energy storage ceramic with better performance can be prepared to meet the development trend of miniaturization and high integration level of electronic products.
本发明属于电介质材料技术领域，具体为一种钽镁镧改性铁酸铋基电介质储能材料及制备方法，包括步骤1：配料，将氧化铋、氧化铁、碳酸钡、氧化钛、氧化镧、氧化镁和氧化钽混合，得到混合物；步骤2：混料，向混合物中加入与混合物等量的无水乙醇，持续球磨1小时，使粉体混合均匀形成浆料；步骤3：烘干，把浆料置于80℃烘箱内恒温干燥，获得混合均匀的粉料；步骤4：固相反应，将混合均匀的粉料置于模具中150MPa下压制成型3分钟，将成型块体置于固相反应炉中在800℃下保温3小时发生固相反应；步骤5：球磨、成型和烧结。其结构合理，能够制备具有更优性能的无铅储能陶瓷来满足电子产品小型化和高集成度的发展趋势。
Tantalum-magnesium-lanthanum modified bismuth ferrite-based dielectric energy storage material and preparation method thereof
一种钽镁镧改性铁酸铋基电介质储能材料及制备方法
GE WENWEI (Autor:in) / WU CHEN (Autor:in) / QIU XIAOMING (Autor:in)
28.03.2023
Patent
Elektronische Ressource
Chinesisch
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