Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Silicon nitride ceramic material, substrate and raw material composition, preparation method and application thereof
The invention discloses a silicon nitride ceramic material, a substrate and a raw material composition, a preparation method and application thereof. The raw material composition of the silicon nitride ceramic material comprises the following components in parts by weight: 55-75 parts of silicon nitride, 20-30 parts of rod-like beta-Si3N4 and 4-10 parts of a sintering aid. The silicon nitride ceramic material prepared in the invention has small anisotropic performance difference, high thermal conductivity and high strength, the fracture toughness is greater than or equal to 7 MPa.m < 1/2 >, the fracture toughness difference in the pressure direction and the vertical pressure direction in the hot pressing sintering process is less than 4%, the thermal conductivity in each direction is close, and the thermal conductivity in each direction is close to that in the hot pressing sintering process. A silicon nitride ceramic substrate prepared by cutting the silicon nitride ceramic material through an electroplated diamond fretsaw can be used as a semiconductor ceramic substrate with relatively high requirements on mechanical and thermal properties.
本发明公开了一种氮化硅陶瓷材料、基板及其原料组合物、制备方法和应用。氮化硅陶瓷材料的原料组合物包括如下重量份数的各组分：55～75份氮化硅、20～30份棒状β‑Si3N4和4～10份烧结助剂。本发明制得的氮化硅陶瓷材料各向性能差异较小，具有高热导和高强度的性能，断裂韧性大于或等于7MPa·m1/2，沿热压烧结过程中压力方向和垂直压力方向的断裂韧性差别小于4％，各个方向热导率接近，该氮化硅陶瓷材料经电镀金刚石线锯切割制得的氮化硅陶瓷基板可作为对力学、热学性能要求较高的半导体用陶瓷基板。
Silicon nitride ceramic material, substrate and raw material composition, preparation method and application thereof
The invention discloses a silicon nitride ceramic material, a substrate and a raw material composition, a preparation method and application thereof. The raw material composition of the silicon nitride ceramic material comprises the following components in parts by weight: 55-75 parts of silicon nitride, 20-30 parts of rod-like beta-Si3N4 and 4-10 parts of a sintering aid. The silicon nitride ceramic material prepared in the invention has small anisotropic performance difference, high thermal conductivity and high strength, the fracture toughness is greater than or equal to 7 MPa.m < 1/2 >, the fracture toughness difference in the pressure direction and the vertical pressure direction in the hot pressing sintering process is less than 4%, the thermal conductivity in each direction is close, and the thermal conductivity in each direction is close to that in the hot pressing sintering process. A silicon nitride ceramic substrate prepared by cutting the silicon nitride ceramic material through an electroplated diamond fretsaw can be used as a semiconductor ceramic substrate with relatively high requirements on mechanical and thermal properties.
本发明公开了一种氮化硅陶瓷材料、基板及其原料组合物、制备方法和应用。氮化硅陶瓷材料的原料组合物包括如下重量份数的各组分：55～75份氮化硅、20～30份棒状β‑Si3N4和4～10份烧结助剂。本发明制得的氮化硅陶瓷材料各向性能差异较小，具有高热导和高强度的性能，断裂韧性大于或等于7MPa·m1/2，沿热压烧结过程中压力方向和垂直压力方向的断裂韧性差别小于4％，各个方向热导率接近，该氮化硅陶瓷材料经电镀金刚石线锯切割制得的氮化硅陶瓷基板可作为对力学、热学性能要求较高的半导体用陶瓷基板。
Silicon nitride ceramic material, substrate and raw material composition, preparation method and application thereof
氮化硅陶瓷材料、基板及其原料组合物、制备方法和应用
ZHAO HONGWEI (Autor:in)
28.03.2023
Patent
Elektronische Ressource
Chinesisch
IPC:
C04B
Kalk
,
LIME
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