Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Improved graphite crucible as well as preparation method and application thereof
The invention relates to an improved graphite crucible as well as a preparation method and application thereof, and the preparation method comprises the following steps: carrying out heat treatment on an inner cavity of the graphite crucible in an oxygen-containing atmosphere to obtain the improved graphite crucible. The inner wall of the improved graphite crucible provided by the invention is of a pore structure; the porosity of the pore structure is gradually reduced in the direction away from the center axis of the improved graphite crucible. The pore structure of the innermost layer of the inner wall enables the contact surface area of graphite and a silicon-containing alloy solution to be increased, and the speed of dissolving a carbon element into the silicon-containing alloy solution is increased, so that the growth speed of the SiC single crystal is increased.
本发明涉及一种改良石墨坩埚及其制备方法与应用，所述制备方法包括如下步骤：含氧气氛下热处理石墨坩埚的内腔，得到所述改良石墨坩埚。本发明提供的改良石墨坩埚的内壁为孔隙结构；沿远离改良石墨坩埚中心轴的方向，所述孔隙结构的孔隙率逐渐降低。内壁最内层的孔隙结构使石墨与含硅的合金溶液接触的表面积增加，提高了碳元素溶解到含硅的合金溶液中的速度，从而提高了SiC单晶生长的速度。
Improved graphite crucible as well as preparation method and application thereof
The invention relates to an improved graphite crucible as well as a preparation method and application thereof, and the preparation method comprises the following steps: carrying out heat treatment on an inner cavity of the graphite crucible in an oxygen-containing atmosphere to obtain the improved graphite crucible. The inner wall of the improved graphite crucible provided by the invention is of a pore structure; the porosity of the pore structure is gradually reduced in the direction away from the center axis of the improved graphite crucible. The pore structure of the innermost layer of the inner wall enables the contact surface area of graphite and a silicon-containing alloy solution to be increased, and the speed of dissolving a carbon element into the silicon-containing alloy solution is increased, so that the growth speed of the SiC single crystal is increased.
本发明涉及一种改良石墨坩埚及其制备方法与应用，所述制备方法包括如下步骤：含氧气氛下热处理石墨坩埚的内腔，得到所述改良石墨坩埚。本发明提供的改良石墨坩埚的内壁为孔隙结构；沿远离改良石墨坩埚中心轴的方向，所述孔隙结构的孔隙率逐渐降低。内壁最内层的孔隙结构使石墨与含硅的合金溶液接触的表面积增加，提高了碳元素溶解到含硅的合金溶液中的速度，从而提高了SiC单晶生长的速度。
Improved graphite crucible as well as preparation method and application thereof
一种改良石墨坩埚及其制备方法与应用
HUANG XIUSONG (Autor:in) / GUO CHAO (Autor:in) / MU FENGWEN (Autor:in)
18.04.2023
Patent
Elektronische Ressource
Chinesisch
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