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Transparent conductive target material for copper electroplating process and preparation method of film circuit
The invention relates to a preparation method of a transparent conductive target material and a thin film circuit for a copper electroplating process, which comprises the following steps of: preparing an indium tin oxide, indium zinc oxide or indium tin zinc oxide target material and a corresponding silver-containing indium tin oxide, silver-containing indium zinc oxide or silver-containing indium tin zinc oxide target material in a slip casting and medium-high temperature sintering mode; by adding silver oxide powder or pure silver powder, the sintering temperature is reduced, and the density and conductivity of the target material are improved; and putting the glass substrate or the N-type silicon wafer subjected to the PECVD (Plasma Enhanced Chemical Vapor Deposition) process, the target material and the corresponding silver-containing target material into a vacuum sputtering machine, coating at room temperature to form an electro-coppering multi-layer thin film structure, and performing a yellow light process and an etching process to form a copper metal grid line so as to complete the manufacturing of a thin film circuit. According to the invention, the target material and the traditional transparent conductive film target material can be placed on the same sputtering machine for sputtering, and the performance requirements of copper electroplating metallization of a heterojunction cell and a heterojunction perovskite laminated cell can be met.
本申请涉及一种用于铜电镀工艺的透明导电靶材及薄膜线路的制备方法,包括通过注浆成型加中高温烧结的方式制作氧化铟锡、氧化铟锌或是氧化铟锡锌靶材以及对应的含银氧化铟锡、含银氧化铟锌或是含银氧化铟锡锌靶材,借由添加氧化银粉末或是纯银粉末降低烧结温度,提高靶材密度及导电性;将玻璃基板或完成PECVD工艺的N型硅片,以及靶材和对应的含银靶材放入真空溅镀机中,在室温条件下进行镀膜,形成电镀铜多层薄膜结构,并进行黄光制程及蚀刻制程,形成铜金属栅线,完成薄膜线路的制作。本发明可实现将靶材与传统的透明导电膜靶材放在同一个溅镀机上溅镀,能够满足异质结电池及异质结钙钛矿叠层电池的铜电镀金属化的性能需求。
Transparent conductive target material for copper electroplating process and preparation method of film circuit
The invention relates to a preparation method of a transparent conductive target material and a thin film circuit for a copper electroplating process, which comprises the following steps of: preparing an indium tin oxide, indium zinc oxide or indium tin zinc oxide target material and a corresponding silver-containing indium tin oxide, silver-containing indium zinc oxide or silver-containing indium tin zinc oxide target material in a slip casting and medium-high temperature sintering mode; by adding silver oxide powder or pure silver powder, the sintering temperature is reduced, and the density and conductivity of the target material are improved; and putting the glass substrate or the N-type silicon wafer subjected to the PECVD (Plasma Enhanced Chemical Vapor Deposition) process, the target material and the corresponding silver-containing target material into a vacuum sputtering machine, coating at room temperature to form an electro-coppering multi-layer thin film structure, and performing a yellow light process and an etching process to form a copper metal grid line so as to complete the manufacturing of a thin film circuit. According to the invention, the target material and the traditional transparent conductive film target material can be placed on the same sputtering machine for sputtering, and the performance requirements of copper electroplating metallization of a heterojunction cell and a heterojunction perovskite laminated cell can be met.
本申请涉及一种用于铜电镀工艺的透明导电靶材及薄膜线路的制备方法,包括通过注浆成型加中高温烧结的方式制作氧化铟锡、氧化铟锌或是氧化铟锡锌靶材以及对应的含银氧化铟锡、含银氧化铟锌或是含银氧化铟锡锌靶材,借由添加氧化银粉末或是纯银粉末降低烧结温度,提高靶材密度及导电性;将玻璃基板或完成PECVD工艺的N型硅片,以及靶材和对应的含银靶材放入真空溅镀机中,在室温条件下进行镀膜,形成电镀铜多层薄膜结构,并进行黄光制程及蚀刻制程,形成铜金属栅线,完成薄膜线路的制作。本发明可实现将靶材与传统的透明导电膜靶材放在同一个溅镀机上溅镀,能够满足异质结电池及异质结钙钛矿叠层电池的铜电镀金属化的性能需求。
Transparent conductive target material for copper electroplating process and preparation method of film circuit
一种用于铜电镀工艺的透明导电靶材及薄膜线路的制备方法
HUANG XIN'ER (Autor:in) / HUANG YUXIANG (Autor:in)
20.10.2023
Patent
Elektronische Ressource
Chinesisch
Target material for RPD, transparent conductive film and preparation method and application thereof
Europäisches Patentamt | 2022
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